BCV 28 E6327 Infineon Technologies, BCV 28 E6327 Datasheet - Page 5

TRANSISTOR DARL PNP AF SOT-89

BCV 28 E6327

Manufacturer Part Number
BCV 28 E6327
Description
TRANSISTOR DARL PNP AF SOT-89
Manufacturer
Infineon Technologies
Datasheet

Specifications of BCV 28 E6327

Package / Case
SOT-89
Transistor Type
PNP - Darlington
Current - Collector (ic) (max)
500mA
Voltage - Collector Emitter Breakdown (max)
30V
Vce Saturation (max) @ Ib, Ic
1V @ 100µA, 100mA
Dc Current Gain (hfe) (min) @ Ic, Vce
20000 @ 100mA, 5V
Power - Max
1W
Frequency - Transition
200MHz
Mounting Type
Surface Mount
Configuration
Single
Transistor Polarity
PNP
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
30 V
Emitter- Base Voltage Vebo
10 V
Collector- Base Voltage Vcbo
40 V
Maximum Dc Collector Current
0.5 A
Maximum Collector Cut-off Current
0.1 uA
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
4000
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
BCV28E6327XT
SP000010879
DC current gain h
V
h
Base-emitter saturation voltage
I
C
C
FE
CE
=
mA
10
10
10
10
10
10
10
10
5
5
5
5
5
= 5 V
10
3
2
1
0
6
5
4
3
(V
0
BCV 28/48
BCV 28/48
-1
BEsat
), h
10
0
125
-55 ˚C
FE
25 ˚C
1.0
FE
˚C
= 1000
=
10
1
(I
C
)
150
2.0
-50 ˚C
25 ˚C
10
˚C
2
V
BEsat
C
EHP00316
EHP00314
V
mA
10
3.0
3
5
Collector-emitter saturation voltage
I
Collector cutoff current I
V
C
C
CBO
CB
= (V
mA
10
10
10
10
nA
5
5
10
10
10
10
10
= V
3
2
1
0
0
4
3
2
1
0
BCV 28/48
0
CEsat
BCV 28/48
CEmax
), h
FE
0.5
50
= 1000
max
BCV28, BCV48
CBO
typ
100
1.0
=
2007-04-20
150
T
-50 ˚C
V
25 ˚C
(T
A
˚C
CEsat
EHP00313
V
EHP00309
˚C
A
)
150
1.5

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