BFN 38 H6327 Infineon Technologies, BFN 38 H6327 Datasheet
BFN 38 H6327
Specifications of BFN 38 H6327
Related parts for BFN 38 H6327
BFN 38 H6327 Summary of contents
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NPN Silicon High-Voltage Transistors Suitable for video output stages TV sets and switching power supplies High breakdown voltage Low collector-emitter saturation voltage Complementary type: BFN39 (PNP) Pb-free (RoHS compliant) package Qualified according AEC Q101 Type Marking BFN38 BFN38 Maximum Ratings ...
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Electrical Characteristics at T Parameter DC Characteristics Collector-emitter breakdown voltage mA Collector-base breakdown voltage I = 100 µ Emitter-base breakdown voltage I = 100 µ ...
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DC current gain BFN 36/ Collector cutoff current I CBO ...
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Collector-base capacitance C Emitter-base capacitance CEB Permissible Pulse Load totmax totDC p BFN 36/ tot max 5 ...
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Package Outline Foot Print Marking Layout (Example) Packing Reel ø180 mm = 1.000 Pieces/Reel Reel ø330 mm = 4.000 Pieces/Reel Pin 1 Package SOT223 6.5 ±0 ±0 2.3 0.7 ±0.1 4.6 0. ...
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... For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system ...