BCP 56-10 H6327 Infineon Technologies, BCP 56-10 H6327 Datasheet - Page 2

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BCP 56-10 H6327

Manufacturer Part Number
BCP 56-10 H6327
Description
TRANS NPN AF 80V 1A SOT223
Manufacturer
Infineon Technologies
Datasheet

Specifications of BCP 56-10 H6327

Transistor Type
NPN
Current - Collector (ic) (max)
1A
Voltage - Collector Emitter Breakdown (max)
80V
Vce Saturation (max) @ Ib, Ic
500mV @ 50mA, 500mA
Dc Current Gain (hfe) (min) @ Ic, Vce
63 @ 150mA, 2V
Power - Max
2W
Frequency - Transition
100MHz
Mounting Type
Surface Mount
Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Thermal Resistance
Parameter
Junction - soldering point
Maximum Ratings
Parameter
Collector-emitter voltage
BCP54
BCP55
BCP56
Collector-emitter voltage
BCP54
BCP55
BCP56
Collector-base voltage
BCP54
BCP55
BCP56
Emitter-base voltage
Collector current
Peak collector current, t
Base current
Peak base current
Total power dissipation-
T
Junction temperature
Storage temperature
1
For calculation of R
S
≤ 120°C
thJA
please refer to Application Note Thermal Resistance
p
1)
≤ 10 ms
2
Symbol
R
Symbol
V
V
V
V
I
I
I
I
P
T
T
C
CM
B
BM
CEO
CER
CBO
EBO
tot
j
stg
thJS
-65 ... 150
BCP54...-BCP56...
Value
Value
≤ 15
100
100
100
200
150
1.5
45
60
45
60
45
60
80
5
1
2
2008-10-10
Unit
K/W
Unit
V
A
mA
W
°C

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