PZTA 14 H6327 Infineon Technologies, PZTA 14 H6327 Datasheet - Page 2

• Manufacturer Part Number: PZTA 14 H6327
• Description: TRANS AF DARL 30V 300MA SOT223
• Manufacturer: Infineon Technologies

Specifications of PZTA 14 H6327

• Transistor Type: NPN - Darlington
• Current - Collector (ic) (max): 300mA
• Voltage - Collector Emitter Breakdown (max): 30V
• Vce Saturation (max) @ Ib, Ic: 1.5V @ 100µA, 100mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 20000 @ 100mA, 5V
• Power - Max: 1.5W
• Frequency - Transition: 125MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -

Electrical Characteristics at T
Parameter
DC Characteristics
Collector-base breakdown voltage
I
Collector-emitter breakdown voltage
I
Emitter-base breakdown voltage
I
Collector-base cutoff current
V
V
Emitter-base cutoff current
V
DC current gain
I
I
Collector-emitter saturation voltage
I
Base emitter saturation voltage
I
AC Characteristics
Transition frequency
I
Collector-base capacitance
V
1
C
C
E
C
C
C
C
C
Pulse test: t < 300µs; D < 2%
CB
CB
EB
CB
= 10 µA, I
= 100 µA, I
= 100 µA, V
= 10 mA, V
= 100 mA, V
= 100 mA, I
= 100 mA, I
= 50 mA, V
= 10 V, I
= 30 V, I
= 30 V, I
= 10 V, f = 1 MHz
C
E
E
C
E
CE
CE
= 0
B
B
BE
= 0
= 0 , T
= 0
CE
= 0
1)
= 0.1 mA
= 0.1 mA
= 5 V
= 5 V, f = 20 MHz
= 0
= 5 V
A
= 150 °C
1)
A
= 25°C, unless otherwise specified
1)
2
f
C
Symbol
V
V
V
I
I
h
V
V
T
CBO
EBO
FE
(BR)CBO
(BR)CES
(BR)EBO
CEsat
BEsat
cb
10000
20000
min.
125
30
30
10
-
-
-
-
-
-
Values
typ.
3
-
-
-
-
-
-
-
-
-
-
-
max.
100
0.1
1.5
10
2008-03-07
2
-
-
-
-
-
-
-
PZTA14
MHz
pF
Unit
V
µA
nA
-
V