BCP 68-25 H6327 Infineon Technologies, BCP 68-25 H6327 Datasheet - Page 2

• Manufacturer Part Number: BCP 68-25 H6327
• Description: TRANS NPN AF 20V 1A SOT223
• Manufacturer: Infineon Technologies

Specifications of BCP 68-25 H6327

• Transistor Type: NPN
• Current - Collector (ic) (max): 1A
• Voltage - Collector Emitter Breakdown (max): 20V
• Vce Saturation (max) @ Ib, Ic: 500mV @ 100mA, 1A
• Dc Current Gain (hfe) (min) @ Ic, Vce: 160 @ 500mA, 1V
• Power - Max: 3W
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -

Thermal Resistance
Parameter
Junction - soldering point
Electrical Characteristics at T
Parameter
DC Characteristics
Collector-emitter breakdown voltage
I
Collector-base breakdown voltage
I
Collector-emitter breakdown voltage
I
Emitter-base breakdown voltage
I
Collector-base cutoff current
V
V
DC current gain
I
I
I
Collector-emitter saturation voltage
I
Base-emitter voltage
I
I
AC Characteristics
Transition frequency
I
1
2
C
C
C
E
C
C
C
C
C
C
C
For calculation of R
Pulse test: t < 300µs; D < 2%
CB
CB
= 10 µA, I
= 30 mA, I
= 10 µA, I
= 10 µA, V
= 5 mA, V
= 500 mA, V
= 1 A, V
= 1 A, I
= 5 mA, V
= 1 A, V
= 100 mA, V
= 25 V, I
= 25 V, I
B
CE
CE
= 100 mA
C
E
CE
CE
B
E
E
BE
= 1 V
= 1 V
= 0
= 0
= 0
= 0
= 0 , T
CE
CE
2)
= 10 V
= 10 V
= 0
thJA
= 1 V
= 5 V, f = 100 MHz
2)
please refer to Application Note Thermal Resistance
A
= 150 °C
1)
A
= 25°C, unless otherwise specified
2)
2
f
Symbol
R
Symbol
V
V
V
V
I
h
V
V
T
CBO
FE
(BR)CEO
(BR)CBO
(BR)CES
(BR)EBO
CEsat
BE(ON)
thJS
min.
160
50
60
20
25
25
5
-
-
-
-
-
-
Values
Value
≤ 12
250
typ.
100
0.6
-
-
-
-
-
-
-
-
-
-
max.
100
375
0.1
0.5
BCP68-25
2008-10-10
1
-
-
-
-
-
-
-
-
MHz
Unit
K/W
Unit
V
µA
-
V