MMBTA92LT1 Infineon Technologies, MMBTA92LT1 Datasheet - Page 4

• Manufacturer Part Number: MMBTA92LT1
• Description: TRANSISTOR HI-VOLT PNP SOT-23
• Manufacturer: Infineon Technologies

Specifications of MMBTA92LT1

• Transistor Type: PNP
• Current - Collector (ic) (max): 500mA
• Voltage - Collector Emitter Breakdown (max): 300V
• Vce Saturation (max) @ Ib, Ic: 500mV @ 2mA, 20mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 25 @ 30mA, 10V
• Power - Max: 360mW
• Frequency - Transition: 50MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Other names: MMBTA92LT1INTR; MMBTA92LT1XT; MMBTA92LT1XTINTR; MMBTA92LT1XTINTR; SP000011002

f
Transition frequency f
V
Total power dissipation P
T
CE
MHz
mW
10
10
10
5
5
400
320
280
240
200
160
120
= 10 V
80
40
3
2
1
10
0
SMBTA 92/93
0
0
15
30
5
45
10
1
60
T
75
=
5
90 105 120
tot
( I
10
= ( T
C
2
)
mA
S
EHP00878
)
C
T
°C
5
S
150
10
3
4
Collector-base capacitance C
Emitter-base capacitance C
Permissible Pulse Load
P
P
P
tot max
tot
totmax
DC
pF
90
70
60
50
40
30
20
10
10
10
10
10
0
5
5
5
0
/ P
3
2
1
0
10
SMBTA 92/93
-6
totDC
10
4
=
-5
SMBTA92/MMBTA92
( t
10
8
p
CEB
-4
)
D
=
10
t
T
p
12
-3
t
eb
p
10
16
cb
-2
2007-04-19
= ( V
T
D =
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
= ( V
t
V
s
p
EHP00879
V
EB
CB
CCB
CB
)
(V
22
10
)
EB
0
)