2N6039G ON Semiconductor, 2N6039G Datasheet - Page 3

• Manufacturer Part Number: 2N6039G
• Description: TRANS DARL NPN 4A 80V TO225AA
• Manufacturer: ON Semiconductor
• Type: Power, Switchr

Specifications of 2N6039G

• Transistor Type: NPN - Darlington
• Current - Collector (ic) (max): 4A
• Voltage - Collector Emitter Breakdown (max): 80V
• Vce Saturation (max) @ Ib, Ic: 3V @ 40mA, 4A
• Current - Collector Cutoff (max): 100µA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 750 @ 2A, 3V
• Power - Max: 40W
• Mounting Type: Through Hole
• Package / Case: TO-225-3
• Polarity: NPN
• Number Of Elements: 1
• Collector-emitter Voltage: 80V
• Collector-base Voltage(max): 80V
• Emitter-base Voltage (max): 5V
• Base-emitter Saturation Voltage (max): 4@40mA@4AV
• Collector-emitter Saturation Voltage: 2@8mA@2A/3@40mA@4AV
• Collector Current (dc) (max): 4A
• Operating Temp Range: -65C to 150C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3 +Tab
• Package Type: TO-225
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 80 V
• Emitter- Base Voltage Vebo: 5 V
• Collector- Base Voltage Vcbo: 80 V
• Maximum Dc Collector Current: 4 A
• Maximum Collector Cut-off Current: 500 uA
• Power Dissipation: 40 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current: 4 A
• Dc Collector/base Gain Hfe Min: 100, 500, 750
• Minimum Operating Temperature: - 65 C
• Current, Gain: 100
• Current, Input: 100 mA
• Current, Output: 4 A
• Primary Type: Si
• Resistance, Thermal, Junction To Ambient: 83.3
• Voltage, Collector To Emitter, Saturation: 3 V
• Voltage, Input: 5 V
• Voltage, Output: 80 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 2N6039GOS

approx
+ 8.0 V
approx
-12 V
V
V
R
D
t
DUTY CYCLE = 1.0%
2
1
r
1N5825 USED ABOVE I
MSD6100 USED BELOW I
, t
B
1
0.07
0.05
0.03
0.02
0.01
0
f
MUST BE FAST RECOVERY TYPE, eg:
1.0
0.7
0.5
0.3
0.2
0.1
& R
≤ 10 ns
0.01
C
VARIED TO OBTAIN DESIRED CURRENT LEVELS
Figure 1. Switching Times Test Circuit
SINGLE PULSE
D = 0.5
0.05
0.02
0.02 0.03
0.1
0.2
25 ms
B
0.05
≈ 100 mA
B
0.01
≈ 100 mA
51
for t
and V
to obtain desired test currents.
For NPN test circuit, reverse diode,
polarities and input pulses.
0.1
d
and t
2
R
= 0, R
D
B
1
+ 4.0 V
r
, D
0.2
B
1
is disconnected
and R
0.3
≈ 8.0 k
C
are varied
0.5
TUT
≈ 60
Figure 3. Thermal Response
R
C
- 30 V
http://onsemi.com
V
1.0
CC
SCOPE
2.0
t, TIME (ms)
3
3.0
4.0
2.0
1.0
0.8
0.6
0.4
0.2
q
q
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
T
JC
JC
J(pk)
5.0
0.04
(t) = r(t) q
= 3.12°C/W MAX
- T
0.06
C
10
= P
JC
(pk)
0.1
PNP
NPN
1
q
20
Figure 2. Switching Times
JC
I
C
(t)
, COLLECTOR CURRENT (AMP)
30
0.2
t
s
50
P
0.4
(pk)
DUTY CYCLE, D = t
100
V
I
C
CC
0.6
/I
t
1
B
= 30 V
= 250
t
2
200
1.0
300
t
d
I
T
B1
J
@ V
t
= 25°C
f
= I
1
2.0
/t
BE(off)
B2
500
2
t
r
= 0
1000
4.0