MJE5851G ON Semiconductor, MJE5851G Datasheet

TRANS PWR PNP 8A 350V TO220AB

MJE5851G

Manufacturer Part Number
MJE5851G
Description
TRANS PWR PNP 8A 350V TO220AB
Manufacturer
ON Semiconductor
Series
SWITCHMODE™r
Datasheet

Specifications of MJE5851G

Transistor Type
PNP
Current - Collector (ic) (max)
8A
Voltage - Collector Emitter Breakdown (max)
350V
Vce Saturation (max) @ Ib, Ic
5V @ 3A, 8A
Dc Current Gain (hfe) (min) @ Ic, Vce
5 @ 5A, 5V
Power - Max
80W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Transistor Polarity
PNP
Mounting Style
Through Hole
Collector- Emitter Voltage Vceo Max
350 V
Emitter- Base Voltage Vebo
6 V
Maximum Dc Collector Current
8 A
Power Dissipation
80 W
Continuous Collector Current
8 A
Dc Collector/base Gain Hfe Min
15
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Frequency - Transition
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
MJE5851GOS
MJE5850, MJE5851,
MJE5852
SWITCHMODEt Series
PNP Silicon Power
Transistors
for high−voltage, high−speed, power switching in inductive circuits
where fall time is critical. They are particularly suited for line operated
SWITCHMODE applications.
Features
*For additional information on our Pb−Free strategy and soldering details, please
© Semiconductor Components Industries, LLC, 2006
February, 2006 − Rev. 4
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
The MJE5850, MJE5851 and the MJE5852 transistors are designed
Switching Regulators
Inverters
Solenoid and Relay Drivers
Motor Controls
Deflection Circuits
Fast Turn−Off Times
Operating Temperature Range −65 to +150_C
100_C Performance Specified for:
Pb−Free Packages are Available*
100 ns Inductive Fall Time @ 25_C (Typ)
125 ns Inductive Crossover Time @ 25°C (Typ)
Reversed Biased SOA with Inductive Loads
Switching Times with Inductive Loads
Saturation Voltages
Leakage Currents
MJE5851 and MJE5852 are Preferred Devices
1
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
1
2
3
POWER TRANSISTORS
300−350−400 VOLTS
ORDERING INFORMATION
MJE585x
G
A
Y
WW
http://onsemi.com
PCP SILICON
8 AMPERE
CASE 221A−09
80 WATTS
TO−220AB
STYLE 1
Publication Order Number:
= Device Code
= Pb−Free Package
= Assembly Location
= Year
= Work Week
x = 0, 1, or 2
MARKING
DIAGRAM
MJE585xG
AY WW
MJE5850/D

Related parts for MJE5851G

MJE5851G Summary of contents

Page 1

... Leakage Currents • Pb−Free Packages are Available* *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2006 February, 2006 − Rev. 4 http://onsemi.com 8 AMPERE ...

Page 2

... If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%. ORDERING INFORMATION Device MJE5850 MJE5850G MJE5851 MJE5851G MJE5852 MJE5852G MJE5850, MJE5851, MJE5852 Î Î Î Î Î Î Î Î Î Symbol MJE5850 Î ...

Page 3

ELECTRICAL CHARACTERISTICS Î Î Î Î Î ...

Page 4

TYPICAL ELECTRICAL CHARACTERISTICS 200 T = 150°C 100 25° 7.0 5.0 3.0 2.0 0.1 0.2 0.3 0.5 0.7 1.0 2 COLLECTOR CURRENT (AMPS) C ...

Page 5

MJE5850, MJE5851, MJE5852 Table 1. Test Conditions for Dynamic Performance V CEO(sus) − INPUT + Varied to Attain 100 −V adjusted to obtain desired ...

Page 6

In resistive switching circuits, rise, fall, and storage times have been defined and apply to both current and voltage waveforms since they are in phase. However, for inductive loads which are common to SWITCHMODE power supplies and hammer drivers, current ...

Page 7

The Safe Operating Area figures shown in Figures 12 and 13 are specified for these devices under the test conditions shown 5 2 25°C 1.0 0.5 BONDING WIRE LIMIT 0.2 THERMAL LIMIT ...

Page 8

... American Technical Support: 800−282−9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Phone: 81−3−5773−3850 http://onsemi.com 8 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. ...

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