BUV22
SWITCHMODEt Series
NPN Silicon Power
Transistor
applications.
Features
•
•
•
•
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
*For additional information on our Pb−Free strategy and soldering details, please
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
© Semiconductor Components Industries, LLC, 2006
February, 2006 − Rev. 10
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector−Emitter Voltage (V
Collector−Emitter Voltage (R
Collector−Current − Continuous
Base−Current Continuous
Total Device Dissipation @ T
Operating and Storage Junction
Temperature Range
Thermal Resistance, Junction−to−Case
This device is designed for high speed, high current, high power
High DC Current Gain:
Low V
Very Fast Switching Times:
Pb−Free Package is Available*
h
max = 1.0 V at I
TF max = 0.35 ms at I
FE
CE(sat)
min = 20 at I
Characteristics
, V
Rating
− Peak (PW v 10 ms)
CE(sat)
C
C
= 10 A
BE
BE
C
= 10 A
= 25_C
= −1.5 V)
= 100 W)
C
= 20 A
V
Symbol
Symbol
T
CEO(SUS)
V
V
V
V
J
I
q
P
CBO
, T
EBO
CEX
CER
CM
I
I
JC
C
B
D
stg
−65 to 200
Value
Max
250
300
300
290
250
0.7
40
50
7
8
1
_C/W
Unit
Unit
Vdc
Vdc
Vdc
Vdc
Vdc
Adc
Apk
Adc
_C
W
BUV22
BUV22G
Device
250 VOLTS − 250 WATTS
NPN SILICON POWER
METAL TRANSISTOR
ORDERING INFORMATION
BUV22 = Device Code
G
A
Y
WW
MEX
MARKING DIAGRAM
http://onsemi.com
40 AMPERES
TO−204AE (TO−3)
(Pb−Free)
Package
TO−204
TO−204
= Pb−Free Package
= Assembly Location
= Year
= Work Week
= Country of Origin
CASE 197A
BUV22G
AYWW
MEX
Publication Order Number:
100 Units / Tray
100 Units / Tray
Shipping
BUV22/D