MT46H32M16LFBF-6 IT:C Micron Technology Inc, MT46H32M16LFBF-6 IT:C Datasheet - Page 32

• Manufacturer Part Number: MT46H32M16LFBF-6 IT:C
• Description: DRAM CHIP DDR SDRAM 512MBIT 1.8V 60VFBGA
• Manufacturer: Micron Technology Inc

Specifications of MT46H32M16LFBF-6 IT:C

• Lead Free Status / Rohs Status: Compliant

Table 15: Target Output Drive Characteristics (One-Half Strength)
Notes 1–3 apply to all values; characteristics are specified under best and worst process variations/conditions
PDF: 09005aef83dd2b3e
t67m_512mb_mobile_lpddr.pdf - Rev. C 1/11 EN
Voltage (V)
0.00
0.10
0.20
0.30
0.40
0.50
0.60
0.70
0.80
0.85
0.90
0.95
1.00
1.10
1.20
1.30
1.40
1.50
1.60
1.70
1.80
1.90
Notes:
1. Based on nominal impedance of 55Ω (one-half drive strength) at V
2. The full variation in driver current from minimum to maximum, due to process, voltage,
3. The I-V curve for one-quarter drive strength is approximately 50% of one-half drive
10.16
10.80
10.80
10.80
10.80
10.80
10.80
10.80
10.80
10.80
10.80
10.80
and temperature, will lie within the outer bounding lines of the I-V curves.
strength.
Min
0.00
1.27
2.55
3.82
5.09
6.36
7.64
8.91
Pull-Down Current (mA)
–
–
12.30
14.95
16.84
18.20
19.30
20.30
21.20
21.60
22.00
22.45
22.73
23.21
23.67
24.14
24.61
25.08
25.54
26.01
26.48
26.95
Max
0.00
8.42
32
512Mb: x16, x32 Mobile LPDDR SDRAM
Micron Technology, Inc. reserves the right to change products or specifications without notice.
Output Drive Characteristics
–10.16
–10.80
–10.80
–10.80
–10.80
–10.80
–10.80
–10.80
–10.80
–10.80
–10.80
–10.80
–1.27
–2.55
–3.82
–5.09
–6.36
–7.64
–8.91
Min
0.00
–
–
Pull-Up Current (mA)
© 2009 Micron Technology, Inc. All rights reserved.
DDQ
/2.
–12.30
–14.95
–16.84
–18.20
–19.30
–20.30
–21.20
–21.60
–22.00
–22.45
–22.73
–23.21
–23.67
–24.14
–24.61
–25.08
–25.54
–26.01
–26.48
–26.95
–8.42
Max
0.00