MT46H32M16LFBF-6 IT:C Micron Technology Inc, MT46H32M16LFBF-6 IT:C Datasheet - Page 38

• Manufacturer Part Number: MT46H32M16LFBF-6 IT:C
• Description: DRAM CHIP DDR SDRAM 512MBIT 1.8V 60VFBGA
• Manufacturer: Micron Technology Inc

Specifications of MT46H32M16LFBF-6 IT:C

• Lead Free Status / Rohs Status: Compliant

Figure 11: WRITE Command
PRECHARGE
PDF: 09005aef83dd2b3e
t67m_512mb_mobile_lpddr.pdf - Rev. C 1/11 EN
Note:
BA0, BA1
The PRECHARGE command is used to deactivate the open row in a particular bank or
the open row in all banks. The bank(s) will be available for a subsequent row access a
specified time (
whether one or all banks will be precharged, and in the case where only one bank is
precharged, inputs BA0 and BA1 select the bank. Otherwise, BA0 and BA1 are treated as
“Don’t Care.” After a bank has been precharged, it is in the idle state and must be activa-
ted prior to any READ or WRITE commands being issued to that bank.
Address
1. EN AP = enable auto precharge; DIS AP = disable auto precharge.
RAS#
CAS#
WE#
CK#
CKE
A10
CS#
CK
HIGH
t
RP) after the PRECHARGE command is issued. Input A10 determines
Column
DIS AP
EN AP
Bank
Don’t Care
38
512Mb: x16, x32 Mobile LPDDR SDRAM
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© 2009 Micron Technology, Inc. All rights reserved.
Commands