MT46V64M16P-6T:A Micron Technology Inc, MT46V64M16P-6T:A Datasheet - Page 58
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MT46V64M16P-6T:A
Manufacturer Part Number
MT46V64M16P-6T:A
Description
DRAM Chip DDR SDRAM 1G-Bit 64Mx16 2.5V 66-Pin TSOP Tray
Manufacturer
Micron Technology Inc
Type
DDR SDRAMr
Datasheet
1.MT46V256M4P-6TA_TR.pdf
(82 pages)
Specifications of MT46V64M16P-6T:A
Density
1 Gb
Maximum Clock Rate
333 MHz
Package
66TSOP
Operating Supply Voltage
2.5 V
Maximum Random Access Time
0.7 ns
Operating Temperature
0 to 70 °C
Format - Memory
RAM
Memory Type
DDR SDRAM
Memory Size
1G (64M x 16)
Speed
6ns
Interface
Parallel
Voltage - Supply
2.3 V ~ 2.7 V
Package / Case
66-TSOP
Organization
64Mx16
Address Bus
16b
Access Time (max)
700ps
Operating Supply Voltage (typ)
2.5V
Package Type
TSOP
Operating Temp Range
0C to 70C
Operating Supply Voltage (max)
2.7V
Operating Supply Voltage (min)
2.3V
Supply Current
275mA
Pin Count
66
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MT46V64M16P-6T:A
Manufacturer:
MICRON
Quantity:
5 530
Company:
Part Number:
MT46V64M16P-6T:A
Manufacturer:
MICRON
Quantity:
48
Part Number:
MT46V64M16P-6T:A
Manufacturer:
MICRON/美光
Quantity:
20 000
Figure 30:
PDF: 09005aef80a2f898/Source: 09005aef82a95a3a
DDR_x4x8x16_Core2.fm - 1Gb DDR: Rev. I, Core DDR: Rev. B 12/07 EN
READ-to-WRITE
Notes:
Command
Command
Command
Address
Address
Address
DQS
DQS
DQS
CK#
CK#
CK#
DM
DM
DM
DQ
DQ
DQ
CK
CK
CK
1. Page remains open.
2. DO n = data-out from column n; DI b = data-in from column b.
3. BL = 4 (applies for bursts of 8 as well; if BL = 2, the BURST command shown can be NOP).
4. One subsequent element of data-out appears in the programmed order following DO n.
5. Data-in elements are applied following DI b in the programmed order.
6. Shown with nominal
Bank a,
READ
READ
Bank,
Bank,
READ
Col n
Col n
Col n
T0
T0
T0
CL = 2
BST
BST
BST
T1
T1
T1
CL = 2.5
1
1
1
t
AC,
CL = 3
t
DQSCK, and
58
NOP
NOP
NOP
T2
T2
T2
DO
n
T2n
T2n
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t
DQSQ.
DO
n
WRITE
NOP
Bank,
Col b
T3
T3
T3
NOP
t
(NOM)
DQSS
DO
n
1Gb: x4, x8, x16 DDR SDRAM
T3n
T3n
Transitioning Data
WRITE
Bank,
Col b
WRITE
T4
T4
T4
NOP
DI
b
t
(NOM)
DQSS
©2003 Micron Technology, Inc. All rights reserved.
t
(NOM)
DQSS
T4n
T5
T5
T5
NOP
DI
DI
NOP
NOP
b
b
Operations
Don’t Care
T5n
T5n
T5n