M25P40-VMN6PB NUMONYX, M25P40-VMN6PB Datasheet - Page 36

• Manufacturer Part Number: M25P40-VMN6PB
• Description: Flash Mem Serial-SPI 2.5V/3.3V 4M-Bit 512K x 8 8ns 8-Pin SOIC N Tray
• Manufacturer: NUMONYX

Specifications of M25P40-VMN6PB

• Package: 8SOIC N
• Cell Type: NOR
• Density: 4 Mb
• Architecture: Sectored
• Block Organization: Symmetrical
• Typical Operating Supply Voltage: 2.5|3.3 V
• Sector Size: 64KByte x 8
• Timing Type: Synchronous
• Operating Temperature: -40 to 85 °C
• Interface Type: Serial-SPI

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Figure 20. Power-up timing
Table 8.
1. These parameters are characterized only.
V CC (max)
Symbol
V CC (min)
t
t
V
PUW
VSL
WI
V WI
(1)
(1)
(1)
V CC
V
Time delay to Write instruction
Write Inhibit voltage (device grade 6)
Write Inhibit voltage (device grade 3)
Power-up timing and V
Reset State
CC
Device
of the
(min) to S low
Program, Erase and Write Commands are Rejected by the Device
Chip Selection Not Allowed
Parameter
WI
threshold
tPUW
tVSL
Read Access allowed
Min.
10
1
1
1
Device fully
accessible
Max.
AI04009C
2.1
2.1
10
—
time
Unit
ms
µs
V
V