M25P40-VMN6PB NUMONYX, M25P40-VMN6PB Datasheet - Page 38

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M25P40-VMN6PB

Manufacturer Part Number
M25P40-VMN6PB
Description
Flash Mem Serial-SPI 2.5V/3.3V 4M-Bit 512K x 8 8ns 8-Pin SOIC N Tray
Manufacturer
NUMONYX
Datasheet

Specifications of M25P40-VMN6PB

Package
8SOIC N
Cell Type
NOR
Density
4 Mb
Architecture
Sectored
Block Organization
Symmetrical
Typical Operating Supply Voltage
2.5|3.3 V
Sector Size
64KByte x 8
Timing Type
Synchronous
Operating Temperature
-40 to 85 °C
Interface Type
Serial-SPI

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10
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DC and AC parameters
This section summarizes the operating and measurement conditions, and the DC and AC
characteristics of the device. The parameters in the DC and AC characteristic tables that
follow are derived from tests performed under the Measurement Conditions summarized in
the relevant tables. Designers should check that the operating conditions in their circuit
match the measurement conditions when relying on the quoted parameters.
Table 10.
Table 11.
Table 12.
Table 13.
1. Sampled only, not 100% tested, at T
C
C
Grade 3
Grade 6
Grade 6
Symbol
Symbol
OUT
IN
Device
Erase/Program
Data Retention
Grade
V
T
CC
Parameter
A
cycles
Output capacitance (Q)
Input capacitance (other pins)
Supply voltage
Ambient operating temperature (device grade 6)
Ambient operating temperature (device grade 3)
Operating conditions
Capacitance
Device grade and AC table correlation
Data retention and endurance
2.7V
2.3V
2.7V
Vcc(min)
Parameter
Device grade 6
Device grade 3
at 55°C
150nm Version
(1)
25 MHz
40 MHz
50 MHz
f (max)
Parameter
Condition
A
= 25 °C and a frequency of 25 MHz.
Table 19.
Table 21.
Table 20.
AC Table
Test condition
V
V
OUT
IN
= 0 V
= 0 V
2.7V
2.3V
2.7V
Vcc(min)
100,000
100,000
Min.
20
Min.
–40
–40
2.3
Min.
75 MHz
40 MHz
75 MHz
Max.
f (max)
110nm
Max.
125
3.6
Max.
85
cycles per sector
8
6
Table 22.
Table 21.
Table 22.
AC Table
years
Unit
Unit
Unit
°C
pF
pF
V

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