MPSA06,412 NXP Semiconductors, MPSA06,412 Datasheet - Page 2

• Manufacturer Part Number: MPSA06,412
• Description: TRANSISTOR NPN GP 80V TO-92
• Manufacturer: NXP Semiconductors

Specifications of MPSA06,412

• Transistor Type: NPN
• Current - Collector (ic) (max): 500mA
• Voltage - Collector Emitter Breakdown (max): 80V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 10mA, 100mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 100mA, 1V
• Power - Max: 625mW
• Frequency - Transition: 100MHz
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Other names: 568-1173; 933498980412

Philips Semiconductors
FEATURES
APPLICATIONS
DESCRIPTION
NPN transistor in a TO-92; SOT54 plastic package.
PNP complement: MPSA56.
ORDERING INFORMATION
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Transistor mounted on an FR4 printed-circuit board.
2004 Oct 11
MPSA06
V
V
V
I
I
I
P
T
T
T
SYMBOL
C
CM
BM
TYPE NUMBER
stg
j
amb
Low current (max. 500 mA)
Low voltage (max. 80 V).
General purpose switching and amplification.
CBO
CEO
EBO
tot
NPN general purpose transistor
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
ambient temperature
SC-43A
NAME
PARAMETER
plastic single-ended leaded (through hole) package; 3 leads
open emitter
open base
open collector
T
2
amb
PINNING
handbook, halfpage
DESCRIPTION
PACKAGE
Fig.1
25 C; note 1
CONDITIONS
PIN
1
2
3
Simplified outline (TO-92; SOT54)
and symbol.
1
2
3
collector
base
emitter
65
65
MIN.
DESCRIPTION
Product specification
MAM279
80
80
5
500
1
200
625
+150
150
+150
MAX.
MPSA06
2
VERSION
SOT54
V
V
V
mA
A
mA
mW
C
C
C
1
3
UNIT