MPSA92,412 NXP Semiconductors, MPSA92,412 Datasheet - Page 3
![TRANS PNP 300V 500MA SOT54](/photos/1/39/13964/to-92_pkg_sml.jpg)
MPSA92,412
Manufacturer Part Number
MPSA92,412
Description
TRANS PNP 300V 500MA SOT54
Manufacturer
NXP Semiconductors
Datasheet
1.MPSA92412.pdf
(6 pages)
Specifications of MPSA92,412
Transistor Type
PNP
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
300V
Vce Saturation (max) @ Ib, Ic
500mV @ 2mA, 20mA
Dc Current Gain (hfe) (min) @ Ic, Vce
25 @ 30mA, 10V
Power - Max
625mW
Frequency - Transition
50MHz
Mounting Type
Through Hole
Package / Case
TO-92-3 (Standard Body), TO-226
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Other names
933431190412
MPSA92P
MPSA92P
MPSA92P
MPSA92P
NXP Semiconductors
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
Note
1. Pulse test: t
2004 Aug 20
R
I
I
h
V
V
C
f
j
CBO
EBO
T
SYMBOL
SYMBOL
FE
= 25 °C unless otherwise specified.
CEsat
BEsat
PNP high-voltage transistor
th j-a
c
thermal resistance from junction to ambient
collector cut-off current
emitter cut-off current
DC current gain
collector-emitter saturation voltage I
base-emitter saturation voltage
collector capacitance
transition frequency
p
≤ 300 µs; δ ≤ 0.02.
PARAMETER
PARAMETER
I
I
V
I
I
I
f = 100 MHz
E
C
C
C
E
C
CE
I
I
I
= 0; V
=i
= 0; V
= −20 mA; I
= −20 mA; I
= −10 mA; V
C
C
C
e
= −10 V; note 1
= −1 mA
= −10 mA
= −30 mA
= 0; V
3
CB
BE
note 1
= −200 V
= −3 V
CB
CONDITIONS
B
B
CONDITIONS
= −20 V; f = 1 MHz
CE
= −2 mA; note 1
= −2 mA; note 1
= −20 V;
VALUE
−
−
25
40
25
−
−
−
50
MIN.
200
Product data sheet
−250
−100
−
−
−
−500
−900
6
−
MAX.
MPSA92
UNIT
K/W
nA
nA
mV
mV
pF
MHz
UNIT