MPSA92,126 NXP Semiconductors, MPSA92,126 Datasheet - Page 3
![TRANS PNP 300V 500MA SOT54](/photos/1/39/13964/to-92_pkg_sml.jpg)
MPSA92,126
Manufacturer Part Number
MPSA92,126
Description
TRANS PNP 300V 500MA SOT54
Manufacturer
NXP Semiconductors
Datasheet
1.MPSA92412.pdf
(6 pages)
Specifications of MPSA92,126
Transistor Type
PNP
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
300V
Vce Saturation (max) @ Ib, Ic
500mV @ 2mA, 20mA
Dc Current Gain (hfe) (min) @ Ic, Vce
25 @ 30mA, 10V
Power - Max
625mW
Frequency - Transition
50MHz
Mounting Type
Through Hole
Package / Case
TO-92-3 (Standard Body), TO-226
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Other names
933431190126
MPSA92 AMO
MPSA92 AMO
MPSA92 AMO
MPSA92 AMO
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
NXP Semiconductors
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
Note
1. Pulse test: t
2004 Aug 20
R
I
I
h
V
V
C
f
j
CBO
EBO
T
SYMBOL
SYMBOL
FE
= 25 °C unless otherwise specified.
CEsat
BEsat
PNP high-voltage transistor
th j-a
c
thermal resistance from junction to ambient
collector cut-off current
emitter cut-off current
DC current gain
collector-emitter saturation voltage I
base-emitter saturation voltage
collector capacitance
transition frequency
p
≤ 300 µs; δ ≤ 0.02.
PARAMETER
PARAMETER
I
I
V
I
I
I
f = 100 MHz
E
C
C
C
E
C
CE
I
I
I
= 0; V
=i
= 0; V
= −20 mA; I
= −20 mA; I
= −10 mA; V
C
C
C
e
= −10 V; note 1
= −1 mA
= −10 mA
= −30 mA
= 0; V
3
CB
BE
note 1
= −200 V
= −3 V
CB
CONDITIONS
B
B
CONDITIONS
= −20 V; f = 1 MHz
CE
= −2 mA; note 1
= −2 mA; note 1
= −20 V;
VALUE
−
−
25
40
25
−
−
−
50
MIN.
200
Product data sheet
−250
−100
−
−
−
−500
−900
6
−
MAX.
MPSA92
UNIT
K/W
nA
nA
mV
mV
pF
MHz
UNIT