PN2369A,126 NXP Semiconductors, PN2369A,126 Datasheet - Page 3

• Manufacturer Part Number: PN2369A,126
• Description: TRANSISTOR NPN 15V TO-92
• Manufacturer: NXP Semiconductors

Specifications of PN2369A,126

• Transistor Type: NPN
• Current - Collector (ic) (max): 200mA
• Voltage - Collector Emitter Breakdown (max): 15V
• Vce Saturation (max) @ Ib, Ic: 500mV @ 10mA, 100mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 40 @ 10mA, 350mV
• Power - Max: 500mW
• Frequency - Transition: 500MHz
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Other names: 933856860126; PN2369A AMO; PN2369A AMO

Philips Semiconductors
CHARACTERISTICS
T
2004 Dec 08
I
I
h
V
V
C
f
Switching times (between 10% and 90% levels); see Fig.2
t
t
t
t
t
t
amb
CBO
EBO
T
on
d
r
off
s
f
SYMBOL
FE
CEsat
BEsat
c
NPN switching transistor
= 25 C unless otherwise specified.
collector-base cut-off current
emitter-base cut-off current
DC current gain
collector-emitter saturation voltage I
base-emitter saturation voltage
collector capacitance
transition frequency
turn-on time
delay time
rise time
turn-off time
storage time
fall time
PARAMETER
V
V
V
V
V
T
V
V
I
I
I
I
V
V
I
I
C
C
C
C
C
Con
Boff
amb
CB
CB
EB
CE
CE
CE
CE
CB
CE
= 10 mA; I
= 10 mA; I
= 30 mA; I
= 100 mA; I
= 10 mA; I
= 1.5 mA
= 4 V; I
= 10 mA; I
= 20 V; I
= 20 V; I
= 350 mV; I
= 350 mV; I
= 400 mV; I
= 1 V; I
= 5 V; I
= 10 V; I
= 55 C
3
CONDITIONS
C
C
E
E
E
B
B
B
B
C
= 0 A
= i
= 100 mA
B
= 1 mA
= 10 mA
= 3 mA
= 1 mA
= 0 A
= 0 A; T
= 10 mA; f = 100 MHz 500
Bon
= 10 mA
e
C
C
C
= 0 A; f = 1 MHz
= 10 mA
= 10 mA;
= 30 mA
= 3 mA;
amb
= 125 C
40
20
30
20
700
MIN.
8
10
TYP.
Product specification
PN2369A
400
30
100
120
200
300
250
500
850
4
10
4
6
20
10
10
MAX. UNIT
nA
nA
mV
mV
mV
mV
mV
pF
MHz
ns
ns
ns
ns
ns
ns
A