2PD602AQ,115 NXP Semiconductors, 2PD602AQ,115 Datasheet - Page 2

TRANSISTOR NPN 50V 500MA SC-59

2PD602AQ,115

Manufacturer Part Number
2PD602AQ,115
Description
TRANSISTOR NPN 50V 500MA SC-59
Manufacturer
NXP Semiconductors
Datasheet

Specifications of 2PD602AQ,115

Transistor Type
NPN
Current - Collector (ic) (max)
500mA
Voltage - Collector Emitter Breakdown (max)
50V
Vce Saturation (max) @ Ib, Ic
600mV @ 30mA, 300mA
Dc Current Gain (hfe) (min) @ Ic, Vce
85 @ 150mA, 10V
Power - Max
250mW
Frequency - Transition
140MHz
Mounting Type
Surface Mount
Package / Case
SC-59-3, SMT3, SOT-346, TO-236
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Other names
2PD602AQ T/R
2PD602AQ T/R
934028530115
NXP Semiconductors
FEATURES
• High current (max. 500 mA)
• Low voltage (max. 50 V).
APPLICATIONS
• General purpose switching and amplification.
DESCRIPTION
NPN transistor in an SC-59 plastic package.
PNP complement: 2PB710A.
MARKING
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Transistor mounted on an FR4 printed-circuit board.
1999 Apr 23
2PD602AQ
2PD602AR
2PD602AS
V
V
V
I
I
I
P
T
T
T
C
CM
BM
SYMBOL
stg
j
amb
CBO
CEO
EBO
tot
NPN general purpose transistor
TYPE NUMBER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
PARAMETER
MARKING CODE
XQ
XR
XS
open emitter
open base
open collector
T
amb
≤ 25 °C; note 1
2
PINNING
CONDITIONS
handbook, halfpage
PIN
1
2
3
Fig.1 Simplified outline (SC-59) and symbol.
Top view
base
emitter
collector
1
3
−65
−65
2
MIN.
DESCRIPTION
60
50
5
500
1
200
250
+150
150
+150
1
Product data sheet
MAX.
MAM321
2PD602A
3
2
V
V
V
mA
A
mA
mW
°C
°C
°C
UNIT

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