BC368,126 NXP Semiconductors, BC368,126 Datasheet - Page 3

• Manufacturer Part Number: BC368,126
• Description: TRANSISTOR NPN 20V 1A TO-92
• Manufacturer: NXP Semiconductors

Specifications of BC368,126

• Transistor Type: NPN
• Current - Collector (ic) (max): 1A
• Voltage - Collector Emitter Breakdown (max): 20V
• Vce Saturation (max) @ Ib, Ic: 500mV @ 100mA, 1A
• Dc Current Gain (hfe) (min) @ Ic, Vce: 85 @ 500mA, 1V
• Power - Max: 830mW
• Frequency - Transition: 170MHz
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Other names: 933259240126; BC368 AMO; BC368 AMO

NXP Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Notes
1. Refer to SOT54 (SC-43A) standard mounting conditions.
2. Device mounted on an FR4 printed-circuit board, single-sided copper, tin-plated footprint.
2004 Nov 05
handbook, halfpage
V
V
V
I
I
I
P
T
T
T
C
CM
BM
SYMBOL
stg
j
amb
CBO
CEO
EBO
tot
NPN medium power transistor;
20 V, 1 A
(mW)
P tot
1000
800
600
400
200
0
−65
collector-base voltage
collector-emitter voltage
emitter-base voltage
output current (DC)
peak collector current
peak collector current
total power dissipation
storage temperature
junction temperature
ambient temperature
Fig.1 Power derating curve.
−5
PARAMETER
55
115
T amb (°C)
MLE329
175
open emitter
open base
open collector
T
amb
≤ 25 °C; notes 1 and 2
3
CONDITIONS
−
−
−
−
−
−
−
−65
−
−65
MIN.
32
20
5
1
2
200
0.83
+150
150
+150
Product data sheet
MAX.
BC368
V
V
V
mA
mA
mA
W
°C
°C
°C
UNIT