BC559C,116 NXP Semiconductors, BC559C,116 Datasheet - Page 2

• Manufacturer Part Number: BC559C,116
• Description: TRANSISTOR PNP 30V 100MA TO-92
• Manufacturer: NXP Semiconductors

Specifications of BC559C,116

• Transistor Type: PNP
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 30V
• Vce Saturation (max) @ Ib, Ic: 650mV @ 5mA, 100mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 420 @ 2mA, 5V
• Power - Max: 500mW
• Frequency - Transition: 100MHz
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Other names: 933554910116; BC559C T/R; BC559C T/R

NXP Semiconductors
FEATURES
• Low current (max. 100 mA)
• Low voltage (max. 30 V).
APPLICATIONS
• General purpose switching and amplification.
DESCRIPTION
PNP transistor in a TO-92 (SOT54) plastic package.
NPN complement: BC549.
ORDERING INFORMATION
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
2004 Nov 05
BC559C
V
V
V
I
I
I
P
T
T
T
C
CM
BM
SYMBOL
stg
j
amb
CBO
CEO
EBO
tot
PNP general purpose transistor
TYPE NUMBER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
ambient temperature
PARAMETER
SC-43A
NAME
plastic single-ended leaded (through hole) package; 3 leads
open emitter
open base
open collector
T
amb
2
≤ 25 °C
PINNING
handbook, halfpage
DESCRIPTION
CONDITIONS
Fig.1
PACKAGE
PIN
1
2
3
Simplified outline (TO-92; SOT54)
and symbol.
1
2
emitter
base
collector
3
−
−
−
−
−
−
−
−65
−
−65
DESCRIPTION
MIN.
MAM281
Product data sheet
−30
−30
−5
−100
−200
−200
500
+150
150
+150
MAX.
2
VERSION
BC559
SOT54
V
V
V
mA
mA
mA
mW
°C
°C
°C
3
1
UNIT