BC635,116 NXP Semiconductors, BC635,116 Datasheet - Page 13

• Manufacturer Part Number: BC635,116
• Description: TRANSISTOR NPN 45V 1A TO-92
• Manufacturer: NXP Semiconductors

Specifications of BC635,116

• Transistor Type: NPN
• Current - Collector (ic) (max): 1A
• Voltage - Collector Emitter Breakdown (max): 45V
• Vce Saturation (max) @ Ib, Ic: 500mV @ 50mA, 500mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 63 @ 150mA, 2V
• Power - Max: 830mW
• Frequency - Transition: 180MHz
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Other names: 933221920116; BC635 T/R; BC635 T/R

NXP Semiconductors
10. Revision history
Table 10.
BC635_BCP54_BCX54_7
Product data sheet
Document ID
BC635_BCP54_BCX54_7
Modifications:
BC635_BCP54_BCX54_6
BC635_637_639_4
BCP54_55_56_5
BCX54_55_56_4
Revision history
Release date
20070604
20050225
20011010
20030206
20011010
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Table 1 “Product
Section 1.2
Section 1.3
Table 2 “Quick reference
Table 2 “Quick reference
Figure 2
Table 6 “Limiting
Table 6 “Limiting
Table 6 “Limiting
Table 7 “Thermal
Figure
Figure
Figure
Figure
Figure
Figure
Figure
Figure
Figure
Figure
Table 9 “Packing
Section 11 “Legal
4: Z
4: t
5: added
6: Z
6: t
7: added
8: Z
8: t
9: added
11: amended
and 3: amended
p
p
p
th
th
th
parameter redefined to pulse duration
parameter redefined to pulse duration
parameter redefined to pulse duration
“Features”: amended
“Applications”: amended
Data sheet status
Product data sheet
redefined to Z
redefined to Z
redefined to Z
Product data sheet
Product specification
Product specification
Product specification
overview”: amended
values”: I
values”: I
values”: P
methods”: new packing method for BCX54 added
characteristics”: R
Rev. 07 — 4 June 2007
information”: updated
data”: I
data”: I
C
CM
th(j-a)
th(j-a)
th(j-a)
tot
parameter redefined to collector current
condition added
values for BCP54 and BCX54 adapted
transient thermal impedance from junction to ambient
transient thermal impedance from junction to ambient
transient thermal impedance from junction to ambient
C
CM
parameter redefined to collector current
condition added
th(j-a)
BC635; BCP54; BCX54
values for BCP54 and BCX54 rounded
Change notice
-
CPCN200405029
-
-
-
45 V, 1 A NPN medium power transistors
Supersedes
BC635_BCP54_BCX54_6
BC635_637_639_4
BCP54_55_56_5
BCX54_55_56_4
BC635_637_639_3
BCP54_55_56_4
BCX54_55_56_3
© NXP B.V. 2007. All rights reserved.
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