BC635,112 NXP Semiconductors, BC635,112 Datasheet - Page 5

• Manufacturer Part Number: BC635,112
• Description: TRANSISTOR NPN 45V 1A TO-92
• Manufacturer: NXP Semiconductors

Specifications of BC635,112

• Transistor Type: NPN
• Current - Collector (ic) (max): 1A
• Voltage - Collector Emitter Breakdown (max): 45V
• Vce Saturation (max) @ Ib, Ic: 500mV @ 50mA, 500mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 63 @ 150mA, 2V
• Power - Max: 830mW
• Frequency - Transition: 180MHz
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Other names: 933221920112; BC635P; BC635P

NXP Semiconductors
BC635_BCP54_BCX54_7
Product data sheet
Fig 1. Power derating curve SOT54
Fig 3. Power derating curves SOT89
P
(W)
(1) FR4 PCB, mounting pad for collector 6 cm
(2) FR4 PCB, mounting pad for collector 1 cm
(3) FR4 PCB, standard footprint
tot
1.6
1.2
0.8
0.4
0
FR4 PCB, standard footprint
75
25
0
25
75
P
(W)
tot
1.6
1.2
0.8
0.4
0
75
125
T
006aaa085
amb
2
2
( C)
25
175
(1)
(2)
(3)
Rev. 07 — 4 June 2007
0
25
Fig 2. Power derating curves SOT223
75
P
(W)
(1) FR4 PCB, mounting pad for collector 1 cm
(2) FR4 PCB, standard footprint
tot
1.6
1.2
0.8
0.4
BC635; BCP54; BCX54
0
75
125
T
006aaa087
amb
45 V, 1 A NPN medium power transistors
( C)
25
175
(1)
(2)
0
25
75
© NXP B.V. 2007. All rights reserved.
125
T
006aaa086
amb
2
( C)
175
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