MJD50T4 STMicroelectronics, MJD50T4 Datasheet

TRANSISTOR NPN 400V 1A DPAK

MJD50T4

Manufacturer Part Number
MJD50T4
Description
TRANSISTOR NPN 400V 1A DPAK
Manufacturer
STMicroelectronics
Datasheet

Specifications of MJD50T4

Transistor Type
NPN
Current - Collector (ic) (max)
1A
Voltage - Collector Emitter Breakdown (max)
400V
Vce Saturation (max) @ Ib, Ic
1V @ 200mA, 1A
Current - Collector Cutoff (max)
100µA
Dc Current Gain (hfe) (min) @ Ic, Vce
30 @ 300mA, 10V
Power - Max
15W
Frequency - Transition
10MHz
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-2473-2

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APPLICATIONS
DESCRIPTION
The MJD50 is manufactured using Medium
Voltage Epitaxial Planar technology, resulting in a
rugged high performance cost-effective transistor.
ABSOLUTE MAXIMUM RATINGS
January 2000
Symbol
STMicroelectronics PREFERRED
SALESTYPE
HIGH VOLTAGE CAPABILITY
SURFACE-MOUNTING TO-252 (DPAK)
POWER PACKAGE IN TAPE & REEL
(SUFFIX "T4")
ELECTRICALLY SIMILAR TO TIP50
SWITCH MODE POWER SUPPLIES
AUDIO AMPLIFIERS
GENERAL PURPOSE SWITCHING AND
AMPLIFIER
V
V
V
T
P
I
I
CBO
CEO
EBO
I
CM
T
I
BM
stg
C
B
tot
j
Collector-Base Voltage (I
Collector-Emitter Voltage (I
Emitter-Base Voltage (I
Collector Current
Collector Peak Current (t
Base Current
Base Peak Current (t
Total Dissipation at T
Storage Temperature
Max. Operating Junction Temperature
®
Parameter
p
c
< 5 ms)
= 25
C
p
E
= 0)
< 5 ms)
= 0)
B
o
C
= 0)
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
INTERNAL SCHEMATIC DIAGRAM
-65 to 150
(Suffix "T4")
Value
TO-252
500
400
150
0.6
1.2
DPAK
15
5
1
2
1
3
MJD50
Unit
o
o
W
V
V
V
A
A
A
A
C
C
1/6

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MJD50T4 Summary of contents

Page 1

... STMicroelectronics PREFERRED SALESTYPE HIGH VOLTAGE CAPABILITY SURFACE-MOUNTING TO-252 (DPAK) POWER PACKAGE IN TAPE & REEL (SUFFIX "T4") ELECTRICALLY SIMILAR TO TIP50 APPLICATIONS SWITCH MODE POWER SUPPLIES AUDIO AMPLIFIERS GENERAL PURPOSE SWITCHING AND AMPLIFIER DESCRIPTION The MJD50 is manufactured using Medium Voltage Epitaxial Planar technology, resulting in a rugged high performance cost-effective transistor ...

Page 2

MJD50 THERMAL DATA R Thermal Resistance Junction-case thj-case R Thermal Resistance Junction-ambient thj-amb ELECTRICAL CHARACTERISTICS (T Symbol Parameter I Collector Cut-off CES Current ( Collector Cut-off CEO Current ( Emitter Cut-off Current ...

Page 3

DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain Collector-Emitter Saturation Voltage Collector-Base Capacitance MJD50 3/6 ...

Page 4

MJD50 Switching Time Inductive Load Switching Time Inductive Load 4/6 Switching Time Inductive Load Switching Time Inductive Load ...

Page 5

TO-252 (DPAK) MECHANICAL DATA DIM. MIN. TYP. A 2.20 A1 0.90 A2 0.03 B 0.64 B2 5.20 C 0.45 C2 0.48 D 6.00 E 6.40 G 4. MAX. MIN. 2.40 0.087 ...

Page 6

... This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. © 2000 STMicroelectronics – Printed in Italy – All Rights Reserved Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U ...

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