MJD50T4 STMicroelectronics, MJD50T4 Datasheet - Page 2

• Manufacturer Part Number: MJD50T4
• Description: TRANSISTOR NPN 400V 1A DPAK
• Manufacturer: STMicroelectronics

Specifications of MJD50T4

• Transistor Type: NPN
• Current - Collector (ic) (max): 1A
• Voltage - Collector Emitter Breakdown (max): 400V
• Vce Saturation (max) @ Ib, Ic: 1V @ 200mA, 1A
• Current - Collector Cutoff (max): 100µA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 30 @ 300mA, 10V
• Power - Max: 15W
• Frequency - Transition: 10MHz
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-2473-2

MJD50
THERMAL DATA
ELECTRICAL CHARACTERISTICS (T
2/6
Safe Operating Area
V
Pulsed: Pulse duration = 300 s, duty cycle 1.5 %
V
Symbol
V
R
R
CEO(sus)
CE(sat)
BE(on)
thj-case
h
I
I
thj-amb
I
CEO
CES
EBO
h
FE
f
T
fe
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Collector Cut-off
Current (V
Collector Cut-off
Current (I
Emitter Cut-off Current
(I
Collector-Emitter
Sustaining Voltage
(I
Collector-Emitter
Saturation Voltage
Base-Emitter On
Voltage
DC Current Gain
Transition Frequency
Small Signal Current
Gain
C
B
= 0)
= 0)
Parameter
B
BE
= 0)
= 0)
V
V
V
I
I
I
I
I
I
I
C
C
C
C
C
C
C
CE
CE
EB
= 30 mA
= 1 A
= 1 A
= 0.3 A
= 1 A
= 0.2 A
= 0.2 A
= 5 V
= 500 V
= 300 V
case
= 25
Test Conditions
I
V
V
V
V
B
V
CE
CE
CE
CE
CE
o
= 0.2 A
C unless otherwise specified)
= 10 V
= 10 V
= 10 V
= 10 V
= 10 V
Derating Curves
f=2MHz
f=1kHz
Max
Max
Min.
400
10
25
30
10
Typ.
8.33
100
Max.
150
0.1
0.1
1.5
1
1
o
o
Unit
MHz
mA
mA
mA
C/W
C/W
V
V
V