MPSW45 ON Semiconductor, MPSW45 Datasheet - Page 2

• Manufacturer Part Number: MPSW45
• Description: TRANS NPN DARL SS 1W 40V TO92
• Manufacturer: ON Semiconductor

Specifications of MPSW45

• Transistor Type: NPN - Darlington
• Current - Collector (ic) (max): 1A
• Voltage - Collector Emitter Breakdown (max): 40V
• Vce Saturation (max) @ Ib, Ic: 1.5V @ 2mA, 1A
• Dc Current Gain (hfe) (min) @ Ic, Vce: 25000 @ 200mA, 5V
• Power - Max: 1W
• Frequency - Transition: 100MHz
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Long Body), TO-226
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Current - Collector Cutoff (max): -
• Other names: MPSW45OS

1. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%.
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 1)
SMALL−SIGNAL CHARACTERISTICS
Collector −Emitter Breakdown Voltage
Collector −Base Breakdown Voltage
Emitter −Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector −Emitter Saturation Voltage
Base−Emitter Saturation Voltage
Base −Emitter On Voltage
Current−Gain − Bandwidth Product
Collector−Base Capacitance
(I
(I
(I
(V
(V
(V
(I
(I
(I
(I
(I
(I
(I
(V
C
C
E
C
C
C
C
C
C
C
CB
CB
EB
CB
= 100 mAdc, V
= 100 mAdc, I
= 10 mAdc, I
= 200 mAdc, V
= 500 mAdc, V
= 1.0 Adc, V
= 1.0 Adc, I
= 1.0 Adc, I
= 1.0 Adc, V
= 200 mAdc, V
= 10 Vdc, I
= 30 Vdc, I
= 40 Vdc, I
= 10 Vdc, I
B
B
C
CE
CE
E
E
C
E
E
= 2.0 mAdc)
= 2.0 mAdc)
= 0)
BE
= 0)
= 0)
= 0)
= 0, f = 1.0 MHz)
CE
CE
CE
= 0)
= 5.0 Vdc)
= 5.0 Vdc)
= 0)
= 5.0 Vdc)
= 5.0 Vdc)
= 5.0 Vdc, f = 100 MHz)
Characteristic
(T
A
= 25°C unless otherwise noted)
R
S
Figure 1. Transistor Noise Model
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n
http://onsemi.com
i
n
2
TRANSISTOR
IDEAL
MPSW45A
MPSW45A
MPSW45A
MPSW45
MPSW45
MPSW45
V
V
V
Symbol
V
V
V
(BR)CBO
(BR)CES
(BR)EBO
I
CE(sat)
BE(sat)
I
BE(on)
h
C
CBO
EBO
f
FE
T
cb
25,000
15,000
4,000
Min
100
40
50
50
60
12
−
−
−
−
−
−
−
150,000
Max
100
100
100
1.5
2.0
2.0
6.0
−
−
−
−
−
−
−
−
nAdc
nAdc
Unit
MHz
Vdc
Vdc
Vdc
Vdc
Vdc
Vdc
pF
−