MPSW45 ON Semiconductor, MPSW45 Datasheet - Page 5

• Manufacturer Part Number: MPSW45
• Description: TRANS NPN DARL SS 1W 40V TO92
• Manufacturer: ON Semiconductor

Specifications of MPSW45

• Transistor Type: NPN - Darlington
• Current - Collector (ic) (max): 1A
• Voltage - Collector Emitter Breakdown (max): 40V
• Vce Saturation (max) @ Ib, Ic: 1.5V @ 2mA, 1A
• Dc Current Gain (hfe) (min) @ Ic, Vce: 25000 @ 200mA, 5V
• Power - Max: 1W
• Frequency - Transition: 100MHz
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Long Body), TO-226
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Current - Collector Cutoff (max): -
• Other names: MPSW45OS

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
ORDERING INFORMATION
Specifications Brochure, BRD8011/D.
MPSW45G
MPSW45RLREG
MPSW45A
MPSW45AG
MPSW45ARLRA
MPSW45ARLRAG
MPSW45AZL1
MPSW45AZL1G
1.0 k
700
500
300
200
100
70
50
30
20
10
0.07
0.05
0.03
0.02
0.01
1.0
0.7
0.5
0.3
0.2
0.1
0.4
0.1
Figure 13. Active Region Safe Operating Area
0.6
0.2
T
D = 0.5
A
= 25°C
V
0.2
CE
0.1
1.0
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Device
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
0.05
2.0
0.5
1.0
4.0
SINGLE PULSE
SINGLE PULSE
6.0
T
2.0
C
= 25°C
10
1.0 s
1.0 ms
5.0
100 ms
20
Figure 12. Thermal Response
http://onsemi.com
10
40
(Pb−Free)
(Pb−Free)
(Pb−Free)
(Pb−Free)
(Pb−Free)
Package
TO−92
TO−92
TO−92
TO−92
TO−92
TO−92
TO−92
TO−92
20
5
t, TIME (ms)
Design Note: Use of Transient Thermal Resistance Data
50
100
Z
Z
DUTY CYCLE + t 1 f +
PEAK PULSE POWER = P
θJC(t)
θJA(t)
200
t
1
= r(t) • R
= r(t) • R
FIGURE A
P
P
1/f
t
P
500
θJC
θJA
2,000 / Tape & Reel
2,000 / Tape & Reel
2,000 / Tape & Reel
2,000 / Ammo Pack
2,000 / Ammo Pack
5,000 Units / Box
5,000 Units / Box
5,000 Units / Box
T
T
Shipping
J(pk)
J(pk)
1.0 k
t 1
t P
- T
- T
P
A
C
= P
= P
2.0 k
†
P
(pk)
(pk)
P
Z
Z
θJA(t)
θJC(t)
5.0 k
10 k