MJD127T4 ON Semiconductor, MJD127T4 Datasheet - Page 2

• Manufacturer Part Number: MJD127T4
• Description: TRANS DARL PNP 8A 100V DPAK
• Manufacturer: ON Semiconductor

Specifications of MJD127T4

• Transistor Type: PNP - Darlington
• Current - Collector (ic) (max): 8A
• Voltage - Collector Emitter Breakdown (max): 100V
• Vce Saturation (max) @ Ib, Ic: 4V @ 80mA, 8A
• Current - Collector Cutoff (max): 10µA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 1000 @ 4A, 4V
• Power - Max: 1.75W
• Frequency - Transition: 4MHz
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: MJD127T4OSCT

2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS
Collector−Emitter Sustaining Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector−Emitter Saturation Voltage
Base−Emitter Saturation Voltage (Note 2)
Base−Emitter On Voltage
Current−Gain−Bandwidth Product
Output Capacitance
Small−Signal Current Gain
(I
(V
(V
(V
(I
(I
(I
(I
(I
(I
(I
(V
(I
C
C
C
C
C
C
C
C
C
CE
CB
BE
CB
= 30 mAdc, I
= 4 Adc, V
= 8 Adc, V
= 4 Adc, I
= 8 Adc, I
= 8 Adc, I
= 4 Adc, V
= 3 Adc, V
= 3 Adc, V
= 5 Vdc, I
= 50 Vdc, I
= 100 Vdc, I
= 10 Vdc, I
B
B
B
CE
CE
CE
CE
CE
= 16 mAdc)
= 80 mAdc)
= 80 mAdc)
C
B
B
E
= 0)
= 4 Vdc)
= 4 Vdc)
= 4 Vdc)
= 4 Vdc, f = 1 MHz)
= 4 Vdc, f = 1 kHz)
E
= 0)
= 0)
= 0, f = 0.1 MHz)
= 0)
2.5
1.5
0.5
Characteristic
T
A
2
1
0
25
20
15
10
T
5
0
(T
C
25
C
= 25_C unless otherwise noted)
50
SURFACE
Figure 1. Power Derating
MOUNT
http://onsemi.com
T
T
C
A
T, TEMPERATURE (°C)
75
2
100
MJD127
MJD122
125
V
Symbol
V
V
V
CEO(sus)
I
I
I
CE(sat)
BE(sat)
BE(on)
|h
h
C
CEO
CBO
EBO
h
FE
fe
ob
fe
|
150
1000
Min
100
100
300
−
−
−
−
−
−
−
4
−
−
12,000
Max
300
200
4.5
2.8
10
10
−
2
−
2
4
−
−
mAdc
mAdc
mAdc
MHz
Unit
Vdc
Vdc
Vdc
Vdc
pF
−
−