MJD127T4 ON Semiconductor, MJD127T4 Datasheet - Page 4

• Manufacturer Part Number: MJD127T4
• Description: TRANS DARL PNP 8A 100V DPAK
• Manufacturer: ON Semiconductor

Specifications of MJD127T4

• Transistor Type: PNP - Darlington
• Current - Collector (ic) (max): 8A
• Voltage - Collector Emitter Breakdown (max): 100V
• Vce Saturation (max) @ Ib, Ic: 4V @ 80mA, 8A
• Current - Collector Cutoff (max): 10µA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 1000 @ 4A, 4V
• Power - Max: 1.75W
• Frequency - Transition: 4MHz
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: MJD127T4OSCT

10,000
5000
3000
2000
1000
10
500
300
200
100
10
10
10
10
10
10
+ 5
+ 4
+ 3
+ 2
+ 1
- 1
- 2
- 3
- 4
- 5
50
30
20
10
-1
+ 0.6
0
5
4
3
2
1
0
0.1
1
PNP MJD127
q
q
+ 0.4
VB
*I
T
VC
REVERSE
C
J
for V
/I
2
100°C
= 150°C
Figure 7. Small−Signal Current Gain
B
for V
0.2
25°C
V
≤ h
+ 0.2
CE
BE
CE(sat)
V
FE/3
0.3
= 30 V
BE
PNP
NPN
5
I
25°C to 150°C
, BASE-EMITTER VOLTAGE (VOLTS)
C
T
V
I
, COLLECTOR CURRENT (AMP)
C
0
C
CE
= 3 Adc
= 25°C
0.5
10
= 4 Vdc
f, FREQUENCY (kHz)
- 0.2 - 0.4 - 0.6
FORWARD
- 55°C to 25°C
20
25°C to 150°C
1
TYPICAL ELECTRICAL CHARACTERISTICS
50
2
100
- 0.8
- 55°C to 25°C
Figure 5. Temperature Coefficients
Figure 6. Collector Cut−Off Region
3
200
- 1
5
http://onsemi.com
- 1.2 - 1.4
500 1000
7
10
4
10
10
10
10
10
10
10
300
200
100
+ 5
+ 4
+ 3
+ 2
+ 1
- 1
- 2
- 3
- 4
- 5
70
50
30
-1
0
- 0.6
5
4
3
2
1
0
0.1
0.1
NPN MJD122
q
VB
- 0.4
*I
REVERSE
T
0.2
C
for V
J
100°C
/I
= 150°C
B
0.2
V
25°C
≤ h
CE
- 0.2
BE
V
FE/3
= 30 V
*q
0.3
BE
0.5
VC
I
, BASE-EMITTER VOLTAGE (VOLTS)
V
C
PNP
NPN
R
, COLLECTOR CURRENT (AMP)
Figure 8. Capacitance
for V
0
, REVERSE VOLTAGE (VOLTS)
25°C to 150°C
0.5
1
CE(sat)
+ 0.2 + 0.4 + 0.6
FORWARD
0.7
2
- 55°C to 25°C
1
C
5
ib
C
ob
- 55°C to 25°C
2
10
+ 0.8
25°C to 150°C
3
20
T
+ 1
J
= 25°C
5
+ 1.2 + 1.4
50
7
100
10