BUH50 ON Semiconductor, BUH50 Datasheet - Page 4

• Manufacturer Part Number: BUH50
• Description: TRANS NPN SW 500V 4A TO-220AB
• Manufacturer: ON Semiconductor
• Series: SWITCHMODE™r

Specifications of BUH50

• Transistor Type: NPN
• Current - Collector (ic) (max): 4A
• Voltage - Collector Emitter Breakdown (max): 500V
• Vce Saturation (max) @ Ib, Ic: 1V @ 1A, 3A
• Current - Collector Cutoff (max): 100µA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 5 @ 2A, 5V
• Power - Max: 50W
• Frequency - Transition: 4MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

3000
2500
2000
1500
1000
4000
3000
2000
1000
0.1
500
10
1
0
0
0.01
1
1
Figure 7. Base−Emitter Saturation Region
I
C
/I
Figure 11. Inductive Storage Time, t
B
= 5
Figure 9. Resistive Switching, t
T
T
J
J
I
T
T
C
= 125°C
= 25°C
I
J
J
C
I
I
/I
2
C
C
, COLLECTOR CURRENT (AMPS)
= 125°C
= 25°C
B
, COLLECTOR CURRENT (AMPS)
, COLLECTOR CURRENT (AMPS)
= 5
0.1
I
2
C
/I
T
B
J
T
= 3
= 25°C
J
= 125°C
I
V
PW = 20 ms
Boff
CC
3
= I
= 125 V
C
/2
TYPICAL SWITCHING CHARACTERISTICS
T
J
TYPICAL STATIC CHARACTERISTICS
= - 40°C
I
1
C
3
/I
I
B
C
/I
= 5
B
4
I
V
V
L
Boff
= 3
C
CC
Z
= 300 V
= 200 mH
= I
on
= 15 V
C
/2
si
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10
5
4
4
10000
1000
4000
3000
2000
1000
100
300
200
100
10
1
0
0
1
1
1
Figure 10. Resistive Switch Time, t
I
Figure 12. Inductive Storage Time,
C
/I
B
= 5
I
I
2
C
C
V
, COLLECTOR CURRENT (AMPS)
, COLLECTOR CURRENT (AMPS)
R
Figure 8. Capacitance
, REVERSE VOLTAGE (VOLTS)
C
ib
t
2
c
(pF)
t
fi
T
T
& t
J
J
= 125°C
= 25°C
fi
@ I
10
3
C
/I
B
= 3
3
I
V
PW = 20 ms
I
T
f
Boff
C
C
(test)
CC
4
t
J
/I
ob
c
B
= 25°C
= I
= 125 V
I
V
V
L
(pF)
= 3
Boff
T
T
= 1 MHz
C
CC
Z
C
J
J
= 300 V
= 200 mH
/2
= 125°C
= 25°C
off
= I
= 15 V
C
/2
100
5
4