BUH50 ON Semiconductor, BUH50 Datasheet - Page 5

• Manufacturer Part Number: BUH50
• Description: TRANS NPN SW 500V 4A TO-220AB
• Manufacturer: ON Semiconductor
• Series: SWITCHMODE™r

Specifications of BUH50

• Transistor Type: NPN
• Current - Collector (ic) (max): 4A
• Voltage - Collector Emitter Breakdown (max): 500V
• Vce Saturation (max) @ Ib, Ic: 1V @ 1A, 3A
• Current - Collector Cutoff (max): 100µA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 5 @ 2A, 5V
• Power - Max: 50W
• Frequency - Transition: 4MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

250
200
150
100
150
140
130
120
100
110
50
90
80
70
60
50
0
1
2
Figure 13. Inductive Switching, t
I
V
V
L
Boff
C
CC
Z
= 300 V
= 200 mH
= I
= 15 V
C
/2
I
C
T
T
Figure 15. Inductive Fall Time
= 1 A
J
J
= 125°C
= 25°C
I
2
C
4
, COLLECTOR CURRENT (AMPS)
h
FE
t
c
, FORCED GAIN
6
t
fi
3
0.8
0.6
0.4
0.2
1
0
20
c
I
C
& t
I
V
V
L
= 2 A
TYPICAL CHARACTERISTICS
Boff
C
8
CC
Z
fi
= 300 V
= 200 mH
THERMAL DERATING
40
Figure 17. Forward Power Derating
T
T
= I
= 15 V
@ I
J
J
C
= 125°C
= 25°C
/2
http://onsemi.com
C
/I
B
T
60
C
= 5
, CASE TEMPERATURE (°C)
10
4
5
80
4000
3000
2000
1000
350
250
150
50
0
3
100
3
SECOND BREAKDOWN
DERATING
I
4
Figure 16. Inductive Crossover Time
Figure 14. Inductive Storage Time
C
120
= 2 A
T
T
J
J
= 125°C
= 25°C
T
T
5
J
J
5
= 125°C
= 25°C
140
I
h
C
h
FE
= 1 A
FE
I
C
, FORCED GAIN
, FORCED GAIN
6
= 1 A
160
7
7
I
C
= 2 A
8
I
V
V
L
Boff
C
CC
Z
9
I
V
V
L
= 300 V
= 200 mH
Boff
C
CC
Z
= I
= 15 V
= 300 V
= 200 mH
= I
C
= 15 V
/2
9
C
/2
10
11