DRDNB26W-7 Diodes Inc, DRDNB26W-7 Datasheet - Page 3

• Manufacturer Part Number: DRDNB26W-7
• Description: ARRAY NPN TRANS/SW DIODE SOT363
• Manufacturer: Diodes Inc

Specifications of DRDNB26W-7

• Transistor Type: NPN - Pre-Biased + Diode
• Current - Collector (ic) (max): 600mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 220
• Resistor - Emitter Base (r2) (ohms): 4.7K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 47 @ 50mA, 5V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
• Current - Collector Cutoff (max): 500nA
• Frequency - Transition: 200MHz
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: 6-TSSOP, SC-88, SOT-363
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: DRDNB26WDITR

Electrical Characteristics, DRDN010W NPN Transistor
Electrical Characteristics, DRDN005W NPN Transistor
Electrical Characteristics, DRDP006W PNP Transistor
Electrical Characteristics, DRDNB16W Pre-Biased NPN Transistor
DC Current Gain
Collector-Emitter Saturation Voltage
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Current Gain-Bandwidth Product
Capacitance
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain-Bandwidth Product
DC Current Gain
Collector-Emitter Saturation Voltage
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Current Gain-Bandwidth Product
Capacitance
Input Voltage
Output Voltage
Input Current
Output Current
DC Current Gain
Gain-Bandwidth Product
DS30573 Rev. 10 - 2
Characteristic
Characteristic
Characteristic
Characteristic
Symbol
V
V
V
I
O(off)
O(on)
G
l(off)
l(on)
f
I
T
l
www.diodes.com
l
V
V
V
V
Symbol
V
V
V
CE(SAT)
(BR)CBO
(BR)CEO
(BR)EBO
V
Symbol
I
C
I
h
CBO
EBO
(BR)CBO
(BR)CEO
(BR)EBO
CE(SAT)
f
I
C
obo
V
V
V
FE
V
V
T
Symbol
h
CBO
f
obo
(BR)CBO
(BR)CEO
(BR)EBO
FE
CE(SAT)
BE(SAT)
T
I
I
3 of 9
h
CBO
CES
f
FE
T
Min
0.3
56
⎯
⎯
⎯
⎯
⎯
Min
150
100
45
18
⎯
⎯
⎯
⎯
Min
100
200
5
-60
-60
⎯
⎯
⎯
-5
Min
100
100
4.0
80
80
⎯
⎯
⎯
⎯
Typ
200
⎯
⎯
⎯
⎯
⎯
⎯
Max
800
Max
0.5
300
-0.4
⎯
⎯
⎯
⎯
-10
@T
1
1
8
⎯
⎯
⎯
⎯
@T
@T
8
Max
0.3V
A
A
A
2.0
7.2
0.5
⎯
⎯
⎯
Max
0.25
= 25°C unless otherwise specified
= 25°C unless otherwise specified
= 25°C unless otherwise specified
100
100
1.2
⎯
⎯
⎯
⎯
⎯
Unit
MHz
Unit
MHz
nA
pF
⎯
V
V
V
V
μA
μA
pF
⎯
V
V
V
V
Unit
MHz V
mA V
μA
⎯
V
V
V
I
I
I
I
I
V
V
V
C
C
C
C
E
MHz
Unit
CB
CE
CB
V
V
I
V
V
I
I
I
I
I
V
V
V
V
nA
nA
O
C
C
C
C
E
⎯
= -150mA, I
= -10μA, I
= -10mA, I
= -10μA, I
= -150mA, V
V
V
V
V
V
CC
O
I
CC
O
CE
CB
EB
CE
CB
@T
/I
= 300mA, I
= 100μA, I
= 1mA, I
= 100μA, I
= 100mA, V
= 5V
= -50V, I
= -20V, I
= -10V, I
l
= 0.3V, I
= 5V, I
= 50mA/2.5mA
= 10V, I
= 4V, I
= 5V, I
= 50V, V
= 40V, I
= 10V, I
= 10V, I
A
= 25°C unless otherwise specified
I
I
I
V
V
V
V
I
I
I
I
V
f = 100MHz
C
C
E
C
C
C
C
CB
CB
CE
CE
CE
O
= 100μA, I
= 100mA, I
C
= 100μA, I
= 1.0mA, I
= 10mA, V
= 100mA, V
= 100mA, V
E
B
C
B
O
E
C
E
Test Condition
O
= 50mA
E
E
C
E
= 60V, I
= 80V, I
B
= 0
= 0
= 60V, I
= 80V, I
= 2.0V, I
Test Condition
Test Condition
= 0
C
E
= 0
= 0
= 100μA
= 0
= -50mA, f = 100MHz
= 0, f = 1MHz
I
B
CE
= 20mA
= 5mA, f = 100MHz
= -15mA
= 0
= 50mA, f = 100MHz
= 0, f = 1MHz
= 0V
CE
= 0
= 0
= 30mA
= -10V
Test Condition
= 1V
BO
BO
E
E
E
B
C
C
B
= 0
= 0
CE
CE
CE
= 0
= 0
= 0
= 10mA,
= 10mA
= 0V
= 0V
© Diodes Incorporated
= 1.0V
= 1.0V
= 1.0V
DRD (xxxx) W