DRDNB26W-7 Diodes Inc, DRDNB26W-7 Datasheet - Page 4

• Manufacturer Part Number: DRDNB26W-7
• Description: ARRAY NPN TRANS/SW DIODE SOT363
• Manufacturer: Diodes Inc

Specifications of DRDNB26W-7

• Transistor Type: NPN - Pre-Biased + Diode
• Current - Collector (ic) (max): 600mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 220
• Resistor - Emitter Base (r2) (ohms): 4.7K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 47 @ 50mA, 5V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
• Current - Collector Cutoff (max): 500nA
• Frequency - Transition: 200MHz
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: 6-TSSOP, SC-88, SOT-363
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: DRDNB26WDITR

Electrical Characteristics, DRDNB26W Pre-Biased NPN Transistor
Electrical Characteristics, DRDPB16W Pre-Biased PNP Transistor
Electrical Characteristics, DRDPB26W Pre-Biased PNP Transistor
Electrical Characteristics, Switching Diode
Input Voltage
Output Voltage
Input Current
Output Current
DC Current Gain
Gain-Bandwidth Product
Input Voltage
Output Voltage
Input Current
Output Current
DC Current Gain
Gain-Bandwidth Product
Input Voltage
Output Voltage
Input Current
Output Current
DC Current Gain
Gain-Bandwidth Product
Reverse Breakdown Voltage (Note 4)
Forward Voltage
Reverse Current (Note 4)
Total Capacitance
Reverse Recovery Time
Notes:
DS30573 Rev. 10 - 2
4. Short duration pulse test used to minimize self-heating effect.
Characteristic
Characteristic
Characteristic
Characteristic
Symbol
Symbol
Symbol
V
V
V
V
V
I
V
V
I
V
V
I
O(off)
O(off)
O(off)
O(on)
O(on)
O(on)
G
G
G
l(off)
l(on)
f
l(off)
l(on)
f
l(off)
l(on)
f
I
I
I
T
T
T
l
l
l
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l
l
l
Symbol
@T
V
4 of 9
(BR)R
C
V
I
t
R
rr
F
A
T
Min
Min
-0.3
Min
-0.5
0.5
47
56
47
= 25°C unless otherwise specified
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
0.62
Min
75
⎯
⎯
⎯
⎯
⎯
⎯
Typ
200
Typ
Typ
200
200
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
-0.3V
-0.3V
Max
0.3V
Max
Max
-2.0
-7.2
-0.5
-3.0
-0.5
3.0
0.5
-28
⎯
28
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
0.855
Max
0.72
1.25
1.0
2.5
4.0
4.0
⎯
50
30
25
Unit
MHz V
Unit
MHz V
Unit
MHz V
mA V
mA V
mA V
μA
μA
μA
⎯
⎯
⎯
V
V
V
V
V
V
V
V
V
Unit
μA
μA
μA
nA
pF
⎯
ns
V
V
V
I
V
V
V
V
I
V
V
V
V
I
V
V
O
O
O
@T
@T
CC
O
I
CC
O
CE
CC
O
I
CC
O
CE
CC
O
I
CC
O
CE
@T
/I
/I
/I
= 5V
= -5V
= -5V
l
l
l
= 0.3V, I
= 5V, I
= -0.3V, I
= -5V, I
= -0.3V, I
= -5V, I
= 50mA/2.5mA
= -50mA/-2.5mA
= -50mA/-2.5mA
= 10V, I
= -10V, I
= -10V, I
= 5V, I
= 50V, V
= -5V, I
= -50V, V
= -5V, I
= -50V, V
A
A
A
I
I
I
I
I
V
V
V
V
V
I
I
R
F
F
F
F
F
rr
= 25°C unless otherwise specified
= 25°C unless otherwise specified
R
R
R
R
R
= 25°C unless otherwise specified
= 0.1 x I
= 5.0mA
= 10mA
= 100mA
= 150mA
= I
= 10μA
= 75V
= 75V, T
= 25V, T
= 20V
= 0, f = 1.0MHz
O
R
O
O
O
O
= 50mA
O
O
= 10mA,
E
Test Condition
Test Condition
O
Test Condition
O
= -50mA
= -50mA
= 100μA
E
E
I
= 20mA
= -100μA
= -100μA
= 5mA, f = 100MHz
I
I
= 0V
= -20mA
= -20mA
= -5mA, f = 100MHz
= -5mA, f = 100MHz
= 0V
= 0V
Test Condition
R
, R
J
J
= 150°C
= 150°C
L
= 100Ω
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