DTA123EMT2L Rohm Semiconductor, DTA123EMT2L Datasheet - Page 2

• Manufacturer Part Number: DTA123EMT2L
• Description: TRANS DGTL PNP 50V 100MA VMT3
• Manufacturer: Rohm Semiconductor

Specifications of DTA123EMT2L

• Transistor Type: PNP - Pre-Biased
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 2.2K
• Resistor - Emitter Base (r2) (ohms): 2.2K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 20 @ 20mA, 5V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 500µA, 10mA
• Frequency - Transition: 250MHz
• Power - Max: 150mW
• Mounting Type: Surface Mount
• Package / Case: VMT3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: DTA123EMT2LTR

○
DTA123EM / DTA123EE / DTA123EUA / DTA123EKA
∗ Characteristics of built-in transistor
c
www.rohm.com
Supply voltage
Input voltage
Output current
Power dissipation
Junction temperature
Storage temperature
Input voltage
Output voltage
Input current
Output current
DC current gain
Input resistance
Resistance ratio
Transition frequency
Absolute maximum ratings (Ta=25°C)
Electrical characteristics (Ta=25°C)
Electrical characteristic curves
500m
200m
100m
500m
200m
100m
20m
10m
Fig.1 Input voltage vs. output current
50m
5m
2m
1m
100
2009 ROHM Co., Ltd. All rights reserved.
50
20
10
1
−100µ −200µ −500µ
2
1
5
−100µ −200µ −500µ −1m −2m
Parameter
Fig.4 Output voltage vs. output
(ON characteristics)
Ta=−40°C
Parameter
OUTPUT CURRENT : I
OUTPUT CURRENT : I
current
100°C
25°C
−1m −2m
Ta=100°C
Symbol
−5m −10m −20m
−5m −10m −20m
I
C(Max.)
−40°C
Tstg
V
V
P
25°C
Tj
I
CC
O
IN
D
O
Symbol
O
(A)
R
V
(A)
V
V
I
O(off)
V
O(on)
R
G
2
I(off)
I(on)
f
I
DTA123EM
/R
O
T
I
I
1
=−0.3V
O
I
/I
−50m −100m
1
∗
−50m −100m
I
=20
1.54
Min.
0.8
−3
20
−
−
−
−
−
150
DTA123EE
Typ.
−0.1
250
2.2
−55 to +150
−
−
−
−
−
1
−12 to +10
Fig.2 Output current vs. input voltage
−100
−100
−50
150
5m
2m
1m
10m
500µ
200µ
100µ
50µ
20µ
10µ
5µ
2µ
1µ
DTA123EUA DTA123EKA
Max.
−0.5
−0.3
−3.8
−0.5
2.86
0
1.2
−
−
−
Limits
(OFF characteristics)
−0.5
INPUT VOLTAGE : V
MHz
Unit
mA
200
µA
kΩ
V
V
−
−
−1.0
V
V
I
V
V
V
V
O
−1.5
CC
O
I
CC
O
CE
/I
=−5V
=−0.3V, I
=−5V, I
I
=−10mA/−0.5mA
=−5V, I
=−50V, V
=−10V, I
2/2
−2.0
Ta=100°C
Unit
mW
mA
I(off)
°C
°C
O
V
V
O
=−20mA
Conditions
−40°C
O
=−100µA
E
25°C
(V)
=−20mA
I
=5mA, f=100MHz
=0V
V
−2.5
CC
−
−
=−5V
−3.0
500
200
100
20
10
1k
50
5
2
1
−100µ −200µ −500µ −1m −2m
Fig.3 DC current gain vs. output
Ta=100°C
OUTPUT CURRENT : I
current
−40°C
25°C
−5m −10m −20m
O
2009.03 - Rev.B
(A)
V
O
=−5V
−50m −100m
Data Sheet