DTA123JKAT146 Rohm Semiconductor, DTA123JKAT146 Datasheet - Page 2

TRAN DIGIT PNP 50V 100MA SOT-346

DTA123JKAT146

Manufacturer Part Number
DTA123JKAT146
Description
TRAN DIGIT PNP 50V 100MA SOT-346
Manufacturer
Rohm Semiconductor
Datasheet

Specifications of DTA123JKAT146

Transistor Type
PNP - Pre-Biased
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
2.2K
Resistor - Emitter Base (r2) (ohms)
47K
Dc Current Gain (hfe) (min) @ Ic, Vce
80 @ 10mA, 5V
Vce Saturation (max) @ Ib, Ic
300mV @ 250µA, 5mA
Frequency - Transition
250MHz
Power - Max
200mW
Mounting Type
Surface Mount
Package / Case
SC-59-3, SMT3, SOT-346, TO-236
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
DTA123JKAT146TR
 Absolute maximum ratings (Ta=25C)
 Electrical characteristics (Ta=25C)
 Electrical characteristic curves
∗ Characteristics of built-in transistor
DTA123JM / DTA123JE / DTA123JUA / DTA123JKA
c
Fig.4 Output voltage vs. output current
www.rohm.com
Supply voltage
Input voltage
Output current
Power dissipation
Junction temperature
Storage temperature
Input voltage
Output voltage
Input current
Output current
DC current gain
Input resistance
Resistance ratio
Transition frequency
−500m
−200m
−100m
Fig.1 Input voltage vs. output current
−500m
−200m
−100m
−50m
−20m
−10m
−100
−5m
−2m
−1m
2009 ROHM Co., Ltd. All rights reserved.
−50
−20
−10
−5
−2
−1
−100μ
−100μ
−1
Parameter
−200μ
−200μ
(ON characteristics)
Parameter
Ta=−40°C
OUTPUT CURRENT : I
OUTPUT CURRENT : I
−500μ
−500μ
100°C
25°C
−1m
−1m
−2m
−2m
Ta=100°C
−5m
−5m
Symbol
I
−40°C
C(Max.)
Tstg
V
25°C
V
P
I
Tj
−10m
−10m
CC
O
IN
D
O
O
Symbol
−20m
−20m
V
R
(A)
(A)
V
V
I
V
O(off)
l
O(on)
G
R
2
O
DTA123JM
I(off)
I(on)
f
O
I
/R
T
I
=−0.3V
/l
1
I
I
−50m
=20
−50m
1
−100m
−100m
Min.
−1.1
1.54
80
17
150
DTA123JE
−55 to +150
Typ.
−0.1
250
2.2
21
−12 to +5
Limits
−100
−100
−50
150
DTA123JUA DTA123JKA
Max.
−0.5
−0.3
−3.6
−0.5
2.86
26
Fig.2 Output current vs. input voltage
−500μ
−200μ
−100μ
−10m
−5m
−2m
−50μ
−20μ
−10μ
−1m
−5μ
−2μ
−1μ
0
200
MHz
Unit
mA
μA
V
V
(OFF characteristics)
−0.5
INPUT VOLTAGE : V
V
V
I
V
V
V
V
O
CC
O
I
CC
O
CE
/I
=−5V
−1.0
=−0.3V, I
=−5V, I
I
=−5mA/−0.25mA
=−10V, I
Ta=100°C
=−5V, I
=−50V, V
2/2
−40°C
25°C
Unit
mW
−1.5
mA
°C
°C
V
V
O
O
=−10mA
Conditions
O
=−100μA
E
=−5mA
I
=5mA, f=100MHz
=0V
−2.0
I(off)
(V)
V
−2.5
CC
=−5V
−3.0
500
200
100
50
20
10
1k
5
2
1
−100μ
Fig.3 DC current gain vs. output
−200μ
OUTPUT CURRENT : I
−500μ
current
Ta=100°C
−1m
−40°C
25°C
2009.06 - Rev.B
−2m
Data Sheet
−5m
−10m
O
−20m
(A)
V
O
=−5V
−50m
−100m

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