PDTC143TE,115 NXP Semiconductors, PDTC143TE,115 Datasheet - Page 3

• Manufacturer Part Number: PDTC143TE,115
• Description: TRANS NPN W/RES 50V SOT-416
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of PDTC143TE,115

• Package / Case: SC-75, SOT-416
• Transistor Type: NPN - Pre-Biased
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 4.7K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 200 @ 1mA, 5V
• Vce Saturation (max) @ Ib, Ic: 100mV @ 250µA, 5mA
• Current - Collector Cutoff (max): 1µA
• Power - Max: 150mW
• Mounting Type: Surface Mount
• Configuration: Single
• Transistor Polarity: NPN
• Typical Input Resistor: 4.7 KOhm
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 50 V
• Peak Dc Collector Current: 100 mA
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Resistor - Emitter Base (r2) (ohms): -
• Frequency - Transition: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-2161-2; 934057864115; PDTC143TE T/R

NXP Semiconductors
SIMPLIFIED OUTLINE, SYMBOL AND PINNING
2004 Aug 06
PDTC143TS
PDTC143TE
PDTC143TEF
PDTC143TK
PDTC143TT
PDTC143TU
PDTC143TM
TYPE NUMBER
NPN resistor-equipped transistors;
R1 = 4.7 kΩ, R2 = open
handbook, halfpage
handbook, halfpage
handbook, halfpage
Top view
1
2
1
1
2
3
Bottom view
SIMPLIFIED OUTLINE AND SYMBOL
3
2
3
MHC507
MAM361
3
1
1
1
R1
R1
R1
MDB270
3
2
3
2
2
3
PDTC143T series
PIN
1
2
3
1
2
3
1
2
3
Product data sheet
PINNING
base
collector
emitter
base
emitter
collector
base
emitter
collector
DESCRIPTION