DTA115EKAT146 Rohm Semiconductor, DTA115EKAT146 Datasheet - Page 2

• Manufacturer Part Number: DTA115EKAT146
• Description: TRANS PNP 50V 20MA SOT-346
• Manufacturer: Rohm Semiconductor

Specifications of DTA115EKAT146

• Transistor Type: PNP - Pre-Biased
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 100K
• Resistor - Emitter Base (r2) (ohms): 100K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 82 @ 5mA, 5V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (max): 500nA
• Frequency - Transition: 250MHz
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: SC-59-3, SMT3, SOT-346, TO-236
• Digital: PNP SC-59
• Collector Emitter Voltage V(br)ceo: 50V
• Power Dissipation Pd: 200mW
• Dc Collector Current: 100mA
• Operating Temperature Range: -55°C To +150°C
• Transistor Case Style: SOT-346
• No.: RoHS Compliant
• Transistor Polarity: PNP
• Dc Current Gain Hfe: 82
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: DTA115EKAT146; DTA115EKAT146TR

 Absolute maximum ratings (Ta=25C)
 Electrical characteristics (Ta=25C)
 Electrical characteristic curves
○
DTA115EM / DTA115EE / DTA115EUA / DTA115EKA
c
www.rohm.com
Supply voltage
Input voltage
Output current
Power
dissipation
Junction temperature
Storage temperature
∗
Fig.1 Input voltage vs. Output current
Fig.4 Output voltage vs. Output current
Input voltage
Output voltage
Input current
Output current
DC current gain
Input resistance
Resistance ratio
Transition frequency
500m
200m
100m
500m
200m
100m
Characteristics of built-in transistor
50m
20m
10m
100
2009 ROHM Co., Ltd. All rights reserved.
5m
2m
1m
50
20
10
5
2
1
100μ 200μ
1
10μ
V
I
O
(ON characteristics)
Ta= −40°C
O
/I
20μ
=0.3V
I
=20/1
OUTPUT CURRENT : I
OUTPUT CURRENT : I
500μ 1m
50μ 100μ 200μ
Parameter
DTA115EM / DTA115EE
DTA115EUA / DTA115EKA
Ta=25°C
2m
Parameter
Ta=100°C
Ta=25°C
500μ 1m
5m 10m 20m
O
O
2m
Ta= −40°C
(A)
(A)
Ta=100°C
50m 100m
5m 10m
Symbol
V
R
V
V
I
O(off)
O(on)
G
R
2
I(off)
I(on)
f
I
/R
T
I
1
I
1
∗
Symbol
I
C(Max.)
Tstg
V
P
V
I
Tj
Min.
CC
O
0.8
D
−3
82
70
I
−
−
−
−
−
Fig.2 Output current vs. Input voltage
500μ
200μ
100μ
10m
50μ
20μ
10μ
5m
2m
1m
5μ
2μ
1μ
0
V
(OFF characteristics)
Typ.
−0.1
CC
100
250
−55 to +150
=5V
−
−
−
−
−
1
Ta=25°C
−40 to +10
Ta=100°C
500m
INPUT VOLTAGE : V
Limits
−100
−50
−20
150
200
150
1
−0.15
Max.
−0.5
−0.3
−0.5
2/2
130
1.2
−
−
−
1.5
Ta= −40°C
I
2
(off) (V)
MHz
Unit
mA
μA
kΩ
V
V
−
−
Unit
mW
mA
°C
°C
V
V
2.5
V
V
I
V
V
I
V
O
O
CC
O
I
CC
CE
3
= −5mA, I
= −5V
= −5mA, V
= −0.3V, I
= −5V, I
= −50V, V
= −10V, I
O
I
Conditions
= −0.25mA
O
O
= −100μA
E
= −1mA
= −5V
I
=5mA, f=100MHz
=0V
−
−
Fig.3 DC current gain vs. Output current
500
200
100
50
20
10
1k
5
2
1
10μ
V
O
20μ
=5V
OUTPUT CURRENT : I
50μ 100μ 200μ
2009.06 - Rev.C
Ta=25°C
500μ 1m
Data Sheet
O
2m
(A)
Ta= −40°C
Ta=100°C
5m 10m