DTC123EMT2L Rohm Semiconductor, DTC123EMT2L Datasheet - Page 2

• Manufacturer Part Number: DTC123EMT2L
• Description: TRANS DGTL NPN 50V 100MA VMT3
• Manufacturer: Rohm Semiconductor

Specifications of DTC123EMT2L

• Transistor Type: NPN - Pre-Biased
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 2.2K
• Resistor - Emitter Base (r2) (ohms): 2.2K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 20 @ 20mA, 5V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 500µA, 10mA
• Frequency - Transition: 250MHz
• Power - Max: 150mW
• Mounting Type: Surface Mount
• Package / Case: VMT3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: DTC123EMT2LTR

○
DTC123EM / DTC123EE / DTC123EUA / DTC123EKA
∗ Characteristics of built-in transistor
Supply voltage
Input voltage
Output current
Power dissipation
Junction temperature
Storage temperature
c
www.rohm.com
Input voltage
Output voltage
Input current
Output current
DC current gain
Input resistance
Resistance ratio
Transition frequency
Absolute maximum ratings (Ta=25°C)
Electrical characteristics (Ta=25°C)
Electrical characteristic curves
Fig.1 Input voltage vs. output current
500
200
100
500m
200m
100m
50
20
10
1k
2009 ROHM Co., Ltd. All rights reserved.
100
5
2
1
50
20
10
100µ 200µ
100µ 200µ
2
1
5
Fig.3 DC current gain vs. output
Parameter
(ON characteristics)
Parameter
OUTPUT CURRENT : I
OUTPUT CURRENT : I
current
500µ 1m
500µ 1m
Ta=100°C
Ta=−40°C
−40°C
25°C
2m
2m
100°C
25°C
5m 10m 20m
5m 10m 20m 50m 100m
Symbol
I
C(Max.)
Tstg
V
V
Pd
I
Tj
CC
O
IN
O
Symbol
O
R
V
(A)
(A)
V
V
I
O(off)
V
R
O(on)
G
2
V
I(off)
I(on)
f
I
O
/R
T
I
O
1
=0.3V
I
=5V
DTC123EM
∗
50m 100m
1
Min.
1.54
0.8
20
−
3
−
−
−
−
150
DTC123EE
Typ.
250
0.1
2.2
−
−
−
−
−
1
−55 to +150
−10 to +12
Fig.2 Output current vs. input voltage
Limits
500m
200m
100m
Max.
100
100
150
2.86
500µ
200µ
100µ
50m
20m
10m
10m
50µ
20µ
10µ
5m
2m
1m
50
0.5
0.3
3.8
0.5
1.2
5m
2m
1m
1µ
100µ 200µ
5µ
2µ
1
−
−
−
Fig.4 Output voltage vs. output
DTC123EUA DTC123EKA
0
Ta=100°C
(OFF characteristics)
0.5
MHz
−40°C
Unit
mA
OUTPUT CURRENT : I
µA
kΩ
25°C
current
INPUT VOLTAGE : V
V
V
−
−
500µ 1m
200
1.0
V
V
I
V
V
V
V
O
CC
O
I
CC
O
CE
Ta=100°C
2m
/I
=5V
=0.3V, I
=5V, I
I
1.5
=10mA/0.5mA
=10V, I
=5V, I
=50V, V
−40°C
2/2
25°C
5m 10m 20m
O
2.0
Conditions
O
=20mA
I(off)
O
=100µA
E
Unit
mW
O
mA
°C
°C
=20mA
I
= −5mA, f=100MHz
V
V
=0V
(A)
(V)
−
−
V
l
2.5
O
CC
/l
I
=20
50m 100m
=5V
3.0
2009.03 - Rev.B
Data Sheet