DTA114GKAT146 Rohm Semiconductor, DTA114GKAT146 Datasheet - Page 2

• Manufacturer Part Number: DTA114GKAT146
• Description: TRANS PNP 50V 100MA SOT-346
• Manufacturer: Rohm Semiconductor

Specifications of DTA114GKAT146

• Transistor Type: PNP - Pre-Biased
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 10K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 30 @ 5mA, 5V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 500µA, 10mA
• Frequency - Transition: 250MHz
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: SC-59-3, SMT3, SOT-346, TO-236
• Digital: PNP SC-59
• Collector Emitter Voltage V(br)ceo: 50V
• Power Dissipation Pd: 200mW
• Dc Collector Current: 10mA
• Operating Temperature Range: -55°C To +150°C
• Transistor Case Style: SOT-346
• No.: RoHS Compliant
• Transistor Polarity: PNP
• Dc Current Gain Hfe: 30
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: DTA114GKAT146; DTA114GKAT146TR

 Electrical characteristics (Ta=25C)
∗ Characteristics of built-in transistor
 Electrical characteristic curves
○
DTA114GUA / DTA114GKA
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Emitter-base resistance
Transition frequency
c
www.rohm.com
500
200
100
2009 ROHM Co., Ltd. All rights reserved.
50
20
10
5
2
Ta=25˚C
V
Fig.1 DC Current gain
0.5
O
=5V
COLLECTOR CURRENT : I
1
Parameter
vs. Collector Current
2
5
10
20
c
(mA)
50 100
Symbol Min. Typ. Max. Unit
V
BV
BV
BV
I
I
CE(sat)
h
CBO
EBO
R
f
FE
CBO
CEO
EBO
T
1
∗
−300
−50
−50
−5
30
−
−
7
−
Fig.2 Collector-emitter saturation voltage
1000
500
200
100
50
20
10
250
10
1
−
−
−
−
−
−
−
Ta=25˚C
vs. Collector Current
COLLECTOR CURRENT : V
2
−580
−0.5
−0.3
I
C
13
−
−
−
−
−
/ I
B
I
C
=10 / 1
/ I
5
MHz
B
kΩ
μA
μA
=20 / 1
V
V
V
V
−
10
2/2
I
I
I
V
V
I
I
V
C
C
E
C
C
CB
EB
CE
= −50μA
= −1mA
= −720μA
= −10mA, I
= −5mA, V
20
= −4V
= −50V
= −10V, I
DS
(V)
50
CE
Conditions
B
E
= −0.5mA
=50mA, f=100MHz
100
= −5V
−
2009.06 - Rev.B
Data Sheet