DTA124TETL Rohm Semiconductor, DTA124TETL Datasheet - Page 2

• Manufacturer Part Number: DTA124TETL
• Description: TRANS PNP 50V 100MA SOT-416
• Manufacturer: Rohm Semiconductor

Specifications of DTA124TETL

• Transistor Type: PNP - Pre-Biased
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 22K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 1mA, 5V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 500µA, 5mA
• Frequency - Transition: 250MHz
• Power - Max: 150mW
• Mounting Type: Surface Mount
• Package / Case: SC-75-3, SOT-416
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: DTA124TETL; DTA124TETLTR

 Packaging specifications
 Absolute maximum ratings (Ta=25C)
 Electrical characteristics (Ta=25C)
 Electrical characteristic curves
∗ Characteristics of built-in transistor
○
DTA124TM / DTA124TE / DTA124TUA / DTA124TKA
Fig.1 DC current gain vs. collector current
Part No.
DTA124TM
DTA124TE
DTA124TUA
DTA124TKA
c
www.rohm.com
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Input resistance
Transition frequency
500
200
100
2009 ROHM Co., Ltd. All rights reserved.
1k
20
10
50
5
2
1
-100μ -200μ -500μ -1m -2m
Parameter
Parameter
COLLECTOR URRENT : I
Ta=100°C
Package
Package type
Code
Basic ordering
unit (pieces)
−40°C
25°C
-5m -10m -20m
Taping
VMT3
8000
T2L
−
−
−
Symbol
C
V
V
V
Tstg
V
P
(A)
CBO
CEO
EBO
I
Tj
C
CE
C
=−5V
Taping Taping Taping
Symbol
EMT3
-50m -100m
3000
BV
BV
V
BV
TL
I
I
CE(sat)
h
−
−
−
CBO
EBO
R
f
FE
T
CBO
CEO
EBO
1
DTA124TM DTA124TE DTA124TUA DTA124TKA
∗
UMT3
T106
3000
Min.
15.4
−
−
−
−50
−50
100
−5
−
−
−
−
150
SMT3
T146
3000
−55 to +150
Typ.
−
−
−
250
250
22
−
−
−
−
−
−
-500m
-200m
-100m
-20m
-10m
-50m
-5m
-2m
-1m
Limits
−100
−50
−50
150
-1
−5
-10μ -20μ -50μ -100μ -200μ -500μ -1m -2m -5m -10m
Fig.2 Collector-emitter saturation
Max.
−0.5
−0.5
−0.3
28.6
600
−
−
−
−
COLLECTOR CURRENT : I
voltage vs. collector current
Ta=100°C
200
MHz
Unit
μA
μA
kΩ
−40°C
V
V
V
V
−
25°C
2/2
I
I
I
V
V
I
V
V
C
C
E
C
CB
EB
CE
=−50μA
=−1mA
=−50μA
/I
CE
B
=−4V
=−50V
=−5V, I
=−10V, I
Unit
mW
=−5mA/−0.5mA
mA
°C
°C
V
V
V
C
C
Conditions
I
(A)
=−1mA
C
E
/I
=5mA, f=100MHz
B
=10
−
2009.06 - Rev.B
Data Sheet