DTB713ZMT2L Rohm Semiconductor, DTB713ZMT2L Datasheet
DTB713ZMT2L
Manufacturer Part Number
DTB713ZMT2L
Description
TRANS DGTL PNP 30V 200MA VMT3
Manufacturer
Rohm Semiconductor
Datasheet
1.DTB713ZMT2L.pdf
(3 pages)
Specifications of DTB713ZMT2L
Transistor Type
PNP - Pre-Biased
Current - Collector (ic) (max)
200mA
Voltage - Collector Emitter Breakdown (max)
30V
Resistor - Base (r1) (ohms)
1K
Resistor - Emitter Base (r2) (ohms)
10K
Dc Current Gain (hfe) (min) @ Ic, Vce
140 @ 100mA, 2V
Vce Saturation (max) @ Ib, Ic
300mV @ 2.5mA, 50mA
Frequency - Transition
260MHz
Power - Max
150mW
Mounting Type
Surface Mount
Package / Case
VMT3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
DTB713ZMT2LTR
-200mA / -30V Low V
(with built-in resistors)
Inverter, Interface, Driver
1) V
2) Built-in bias resistors enable the configuration of
3) The bias resistors consist of thin-film resistors with
4) Only the on / off conditions need to be set for operation,
PNP epitaxial plannar silicon transistor
(Resistor built-in type)
∗1 Characteristics of built-in transistor.
∗2 Each terminal mounted on a recommended land.
○
Part No.
DTB713ZE
DTB713ZM
c
www.rohm.com
making the device design easy.
Supply voltage
Input voltage
Collector current
Power dissipation
Junction temperature
Storage temperature
Applications
Feature
Structure
Packaging specifications
Absolute maximum ratings (Ta=25°C)
DTB713ZE / DTB713ZM
an inverter circuit without connecting external input resistors
(see equivalent circuit).
complete isolation to allow positive biasing of the input.
They also have the advantage of almost completely
eliminating parasitic effects.
2009 ROHM Co., Ltd. All rights reserved.
CE
(sat) is lower than conventional products.
Parameter
Package
Packaging type
Basic ordering
unit (pieces)
Code
∗1
∗2
Symbol
I
C (max)
Tstg
V
V
P
Taping
Tj
EMT3
CC
3000
IN
D
TL
−
DTB713ZE DTB713ZM
Taping
VMT3
8000
T2L
−
−55 to +150
−10 to +5
Limits
−200
−30
150
150
CE
1/2
Unit
mW
mA
(sat) Digital transistors
V
V
C
C
R
1
Dimensions (Unit : mm)
Inner circuit
EMT3
JEITA No. (SC-75A)
JEDEC No. <SOT-416>
VMT3
=1.0kΩ / R
IN
DTB713ZE
DTB713ZM
IN
R
1
R
2
2
=10kΩ
0.2
GND(+)
Abbreviated symbol : P11
0.22
Abbreviated symbol : P11
( 3 )
0.5
( 2 )
1.6
1.0
0.5
(3)
0.3
0.32
0.4 0.4
( 1 )
OUT
GND(+)
OUT
1.2
0.8
( 1 )
( 2 )
0.2
Each lead has same dimensions
Each lead has same dimensions
0.15
0.5
0.7
0.55
2009.05 - Rev.B
0.13
(1) GND
(2) IN
(3) OUT
(1) IN
(2) GND
(3) OUT
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DTB713ZMT2L Summary of contents
Page 1
Low V (with built-in resistors) DTB713ZE / DTB713ZM Applications Inverter, Interface, Driver Feature 1) V (sat) is lower than conventional products Built-in bias resistors enable the configuration of an inverter circuit without connecting external input ...
Page 2
DTB713ZE / DTB713ZM Electrical characteristics (Ta=25°C) Parameter Symbol Min. − V I(off) Input voltage −2.5 V I(on) − Output voltage V O(on) − Input current I I − Output current I O(off) DC current gain G 140 I ∗ − ...
Page 3
No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose ...