DTB513ZETL Rohm Semiconductor, DTB513ZETL Datasheet
DTB513ZETL
Manufacturer Part Number
DTB513ZETL
Description
TRANS DGTL PNP 12V 500MA EMT3
Manufacturer
Rohm Semiconductor
Datasheet
1.DTB513ZETL.pdf
(3 pages)
Specifications of DTB513ZETL
Transistor Type
PNP - Pre-Biased
Current - Collector (ic) (max)
500mA
Voltage - Collector Emitter Breakdown (max)
12V
Resistor - Base (r1) (ohms)
1K
Resistor - Emitter Base (r2) (ohms)
10K
Dc Current Gain (hfe) (min) @ Ic, Vce
140 @ 100mA, 2V
Vce Saturation (max) @ Ib, Ic
300mV @ 5mA, 100mA
Frequency - Transition
260MHz
Power - Max
150mW
Mounting Type
Surface Mount
Package / Case
SC-75-3, SOT-416
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
DTB513ZETLTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
DTB513ZETL
Manufacturer:
ROHM
Quantity:
2 712
Transistors
-500mA / -12V Low V
(with built-in resistors)
DTB513ZE / DTB513ZM
Inverter, Interface, Driver
1) V
2) Built-in bias resistors enable the configuration of an
3) The bias resistors consist of thin-film resistors with
4) Only the on / off conditions need to be set for
PNP epitaxial plannar silicon transistor
(Resistor built-in type)
∗1 Characteristics of built-in transistor.
∗2 Each terminal mounted on a recommended land.
∗ Characteristics of built-in transistor.
Input voltage
Output voltage
Input current
Output current
DC current gain
Transition frequency
Input resistance
Resistance ratio
Supply voltage
Input voltage
Collector current
Power dissipation
Junction temperature
Storage temperature
Feature
Structure
Electrical characteristics (Ta=25 C)
Applications
Absolute maximum ratings (Ta=25 C)
complete isolation to allow positive biasing of the
input. They also have the advantage of almost
completely eliminating parasitic effects.
inverter circuit without connecting external input
resistors (see equivalent circuit).
operation, making the device design easy.
CE
(sat) is lower than conventional products.
Parameter
Parameter
∗
∗1
∗2
Symbol
R
V
V
V
I
O(off)
O(on)
R
2
G
I(off)
I(on)
f
Symbol
I
/R
T
I
I
1
I
C (max)
Tstg
V
V
P
1
Tj
CC
IN
D
−2.5
Min.
140
0.7
8.0
−
−
−
−
−
DTB513ZE DTB513ZM
Typ.
−60
260
1.0
10
−
−
−
−
−
−55 to +150
−10 to +5
Limits
−500
−300
Max.
−12
150
150
−0.3
−6.4
−0.5
1.3
12
−
−
−
MHz
Unit
mV
mA
kΩ
μA
V
−
−
CE
V
V
I
V
V
V
V
O
CC
O
I
CC
O
CE
/I
= −5V
= −0.3V, I
= −2V, I
I
= −100mA / −5mA
= −5V, I
= −12V, V
= −10V, I
Unit
mW
mA
V
V
C
C
(sat) Digital transistors
O
Conditions
= −100mA
Dimensions (Unit : mm)
O
E
O
= −100μA
I
=5mA, f=100MHz
=0V
= −20mA
EMT3
JEITA No. (SC-75A)
JEDEC No. <SOT-416>
VMT3
−
−
DTB513ZE
DTB513ZM
Part No.
DTB513ZE
DTB513ZM
Packaging specifications
DTB513ZE / DTB513ZM
0.2
Abbreviated symbol : Y11
0.22
Abbreviated symbol : Y11
( 3 )
0.5
( 2 )
1.6
1.0
Package
Packaging type
Basic ordering
unit (pieces)
0.5
Code
(3)
0.3
0.32
0.4 0.4
( 1 )
1.2
0.8
( 1 )
( 2 )
0.2
R
Each lead has same dimensions
Each lead has same dimensions
1
Equivalent circuit
0.15
=1.0kΩ / R
IN
0.5
0.7
0.55
IN
0.13
R
Rev.A
1
R
2
(1) GND
(2) IN
(3) OUT
(1) IN
(2) GND
(3) OUT
2
Taping
EMT3
=10kΩ
3000
TL
−
GND(+)
Taping
VMT3
8000
OUT
OUT
GND(+)
T2L
−
1/2
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DTB513ZETL Summary of contents
Page 1
Transistors -500mA / -12V Low V (with built-in resistors) DTB513ZE / DTB513ZM Applications Inverter, Interface, Driver Feature 1) V (sat) is lower than conventional products Built-in bias resistors enable the configuration of an inverter circuit without connecting external ...
Page 2
Transistors Electrical characteristic curves I =5mA I =4.5mA 500 I =4mA I Ta=25℃ I =3.5mA - 450 I I =3mA pulsed I - 400 I =2.5mA I - 350 I =2mA I - 300 I =1.5mA I ...
Page 3
Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...