DTB113EKT146 Rohm Semiconductor, DTB113EKT146 Datasheet
DTB113EKT146
Manufacturer Part Number
DTB113EKT146
Description
TRANS DIGITAL PNP 50V 500MA SMT3
Manufacturer
Rohm Semiconductor
Datasheet
1.DTB113EKT146.pdf
(3 pages)
Specifications of DTB113EKT146
Transistor Type
PNP - Pre-Biased
Current - Collector (ic) (max)
500mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
1K
Resistor - Emitter Base (r2) (ohms)
1K
Dc Current Gain (hfe) (min) @ Ic, Vce
33 @ 50mA, 5V
Vce Saturation (max) @ Ib, Ic
300mV @ 2.5mA, 50mA
Frequency - Transition
200MHz
Power - Max
200mW
Mounting Type
Surface Mount
Package / Case
SC-59-3, SMT3, SOT-346, TO-236
Transistor Polarity
PNP
Collector Emitter Voltage V(br)ceo
50V
Power Dissipation Pd
200mW
Dc Collector Current
500mA
Operating Temperature Range
-55°C To +150°C
Transistor Case
RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
DTB113EKT146TR
-500mA / -50V Digital transistors
(with built-in resistors)
Applications
Inverter, Interface, Driver
Features
1) Built-in bias resistors enable theconfiguration of an inverter
2) The bias resistors consist of thin-film resistors with complete
3) Only the on / off conditions need to be set for operation,
Structure
PNP epitaxial planar silicon transistor
(Resistor built-in type)
Packaging specifications
Absolute maximum ratings (Ta=25C)
○
c
Part No.
DTB113EK
www.rohm.com
Supply voltage
Input voltage
Output current
Power dissipation
Junction temperature
Storage temperature
circuit without connecting external input
resistors (see equivalent circuit).
isolation to allow positive biasing of the input.
They also have the advantage of almost completely eliminating
parasitic effects.
making the device design easy.
DTB113EK
2009 ROHM Co., Ltd. All rights reserved.
Parameter
Package
Packaging type
Basic ordering
unit (pieces)
Code
Symbol
Tstg
V
Taping
V
P
SMT3
I
Tj
T146
3000
CC
C
IN
D
−55 to +150
DTB113EK
−10 to +10
Limits
−500
−50
200
150
Unit
mW
mA
V
V
C
C
1/2
Dimensions (Unit : mm)
Inner circuit
R
IN
1
DTB113EK
=R
ROHM : SMT3
EIAJ : SC-59
IN
2
=1.0kΩ
R
1
R
2
GND(+)
0.95 0.95
( 3 )
( 2 )
1.9
2.9
Abbreviated symbol : F11
0.4
OUT
OUT
GND(+)
( 1 )
Each lead has same dimension
0.15
1.1
0.8
2009.06 - Rev.B
(1) GND
(2) IN
(3) OUT
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DTB113EKT146 Summary of contents
Page 1
Digital transistors (with built-in resistors) DTB113EK Applications Inverter, Interface, Driver Features 1) Built-in bias resistors enable theconfiguration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of ...
Page 2
DTB113EK Electrical characteristics (Ta=25C) Parameter Symbol Min. − V I(off) Input voltage −3 V I(on) − Output voltage V O(on) − Input current I I − Output current I O(off) DC current gain Input resistance R ...
Page 3
No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose ...