DTB143TKT146 Rohm Semiconductor, DTB143TKT146 Datasheet - Page 2

• Manufacturer Part Number: DTB143TKT146
• Description: TRANS DGTL PNP 40V 500MA SOT-346
• Manufacturer: Rohm Semiconductor

Specifications of DTB143TKT146

• Transistor Type: PNP - Pre-Biased
• Current - Collector (ic) (max): 500mA
• Voltage - Collector Emitter Breakdown (max): 40V
• Resistor - Base (r1) (ohms): 4.7K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 50mA, 5V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
• Frequency - Transition: 200MHz
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: SC-59-3, SMT3, SOT-346, TO-236
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: DTB143TKT146; DTB143TKT146TR

Transistors
Fig.1 DC current gain vs. collectorcurrent
∗
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Input resistance
Transition frequency
Electrical characteristics (Ta=25°C)
Electrical characteristic curves
Characteristics of built-in transistor
500
200
100
50
20
10
1k
-0.5m
5
2
1
-1m
COLLECTOR CURRENT : I
-2m
Parameter
Ta=100 C
-5m -10m -20m
−40 C
25 C
-50m -100m -200m -500m
C
V
( A)
CE
= −5V
Symbol
V
BV
BV
BV
I
I
CE(sat)
h
CBO
EBO
R
f
FE
CBO
CEO
EBO
T
1
∗
-500m
-200m
-100m
3.29
Min.
−50
−40
100
-50m
-20m
-10m
-5m
-2m
-1m
−5
-0.5m
−
−
−
−
-1
Fig.2Collector-emitter saturation
-1m
Typ. Max. Unit
250
200
COLLECTOR CURRENT : I
4.7
−
−
−
−
−
−
-2m
voltage vs. collector current
Ta=100 C
-5m -10m -20m
−0.5
−0.5
−0.3
6.11
600
−
−
−
−
−40 C
25 C
MHz
µA
µA
kΩ
V
V
V
V
−
-50m -100m -200m -500m
I
I
I
V
V
I
V
V
C
C
E
C
C
CB
EB
CE
CE
= −50µA
= −1mA
= −50µA
/I
l
(A)
C
/l
B
= −4V
= −50V
= −5V, I
= −10V, I
B
= −50mA/−2.5mA
=20
C
= −50mA
E
Conditions
=50mA, f=100MHz
−
Rev.B
DTB143TK
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