DTB123EKT146 Rohm Semiconductor, DTB123EKT146 Datasheet - Page 2

• Manufacturer Part Number: DTB123EKT146
• Description: TRANS PNP 50V 500MA SOT-346
• Manufacturer: Rohm Semiconductor

Specifications of DTB123EKT146

• Transistor Type: PNP - Pre-Biased
• Current - Collector (ic) (max): 500mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 2.2K
• Resistor - Emitter Base (r2) (ohms): 2.2K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 39 @ 50mA, 5V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
• Frequency - Transition: 200MHz
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: SC-59-3, SMT3, SOT-346, TO-236
• Transistor Polarity: PNP
• Collector Emitter Voltage V(br)ceo: 50V
• Power Dissipation Pd: 200mW
• Dc Collector Current: 500mA
• Operating Temperature Range: -55°C To +150°C
• Transistor Case Style: SOT-346
• Dc Current Gain Hfe: 39
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: DTB123EKT146; DTB123EKT146TR

 Electrical characteristics (Ta=25C)
 Electrical characteristic curves
○
DTB123EK
Fig.4
c
www.rohm.com
Input voltage
Output voltage
Input current
Output current
DC current gain
Input resistance
Resistance ratio
Transition frequency
∗
-500m
-200m
-100m
-500m
-200m
-100m
Fig.1
-50m
-20m
-10m
-100
Characteristics of built-in transistor
2009 ROHM Co., Ltd. All rights reserved.
-5m
-2m
-1m
-50
-20
-10
-0.5m
-0.5m
-5
-2
-1
-1
-1m
-1m
Output voltage vs. output current
(ON characteristics)
Input voltage vs. output current
Parameter
-2m
-2m
OUTPUT CURRENT : I
OUTPUT CURRENT : I
Ta=25 C
−40 C
100 C
-5m -10m -20m
-5m -10m -20m
Ta=100 C
−40 C
25 C
-50m -100m -200m -500m
-50m -100m -200m -500m
O
O
(A)
(A)
V
O
l
O
= −0.3V
/l
Symbol
I
=20
R
V
V
V
I
O(off)
O(on)
R
2
G
I(off)
I(on)
f
I
/R
T
I
1
I
1
∗
1.54
Min.
0.8
−3
39
−
−
−
−
−
Typ.
−0.1
200
2.2
−
−
−
−
−
1
Fig.2 Output current vs. input voltage
-500μ
-200μ
-100μ
-10m
-50μ
-20μ
-10μ
-5m
-2m
-1m
-1μ
-5μ
-2μ
0
Max.
−0.5
−0.3
−3.8
−0.5
2.86
Ta=100 C
1.2
−
−
(OFF characteristics)
-0.5
−40 C
25 C
INPUT VOLTAGE : V
-1.0
MHz
Unit
mA
μA
kΩ
V
V
−
−
2/2
-1.5
V
V
I
V
V
V
V
O
CE
CC
O
I
CC
O
/I
= −5V
= −0.3V, I
= −5V, I
-2.0
I
= −50mA/−2.5mA
= −10V, I
= −5V, I
= −50V, V
I (off)
(V)
V
-2.5
CC
= −5V
O
Conditions
= −50mA
E
O
= 50mA, f= 100MHz
O
= −100μA
I
-3.0
=0V
= −20mA
−
−
Fig.3
500
200
100
50
20
10
1k
-0.5m
5
2
1
-1m
DC current gain vs. output current
-2m
OUTPUT CURRENT : I
Ta=100 C
-5m -10m -20m
−40 C
25 C
2009.06 - Rev.C
Data Sheet
-50m -100m -200m -500m
O
(A)
V
O
= −5V