DTD123TKT146 Rohm Semiconductor, DTD123TKT146 Datasheet - Page 2

• Manufacturer Part Number: DTD123TKT146
• Description: TRANS NPN 50V 500MA SOT-346
• Manufacturer: Rohm Semiconductor

Specifications of DTD123TKT146

• Transistor Type: NPN - Pre-Biased
• Current - Collector (ic) (max): 500mA
• Voltage - Collector Emitter Breakdown (max): 40V
• Resistor - Base (r1) (ohms): 2.2K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 50mA, 5V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
• Frequency - Transition: 200MHz
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: SC-59-3, SMT3, SOT-346, TO-236
• Transistor Polarity: NPN
• Collector Emitter Voltage V(br)ceo: 40V
• Power Dissipation Pd: 200mW
• Dc Collector Current: 50mA
• Operating Temperature Range: -55°C To +150°C
• Transistor Case Style: SOT-346
• Dc Current Gain Hfe: 250
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: DTD123TKT146; DTD123TKT146TR

 Electrical characteristics (Ta=25C)
 Electrical characteristic curves
Characteristics of built-in transistor
○
DTD123TK
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Input resistance
Transition frequency
c
www.rohm.com
Fig.1
500
200
100
50
20
10
2009 ROHM Co., Ltd. All rights reserved.
1k
5
2
1
500 1m
DC current gain vs. collector
current
COLLECTOR CURRENT : I
2m
Parameter
Ta100°C
5m 10m 20m
40°C
25°C
50m
100m 200m
C
V
(A)
CE
 5V
500m
Symbol
V
BV
BV
BV
I
I
CE(sat)
h
CBO
EBO
R
f
FE
CBO
CEO
EBO
T
1

Min.
1.54
100
500m
200m
100m
50
40
50m
20m
10m
5




5m
2m
1m
Fig.2 Collector-emitter saturation
1
500 1m
Typ.
250
200
2.2
COLLECTOR CURRENT : I






voltage vs. collector current
2m
5m 10m 20m
Max.
2.86
600
0.5
0.5
0.3




Ta100°C
40°C
MHz
Unit
25°C
A
A
k
V
V
V
V

2/2
50m
100m 200m
C
I
I
I
V
V
I
V
V
l
C
C
E
C
C
(A)
/l
50A
CB
EB
CE
CE
50A
1mA
/I
B
20
B
4V
50V
5V, I
10V, I
50m/2.5mA
500m
C
50mA
E
Conditions
50mA, f100MHz

2009.06 - Rev.B
Data Sheet