DTB114GKT146 Rohm Semiconductor, DTB114GKT146 Datasheet - Page 2

• Manufacturer Part Number: DTB114GKT146
• Description: TRANS PNP 50V 500MA SOT-346
• Manufacturer: Rohm Semiconductor

Specifications of DTB114GKT146

• Transistor Type: PNP - Pre-Biased
• Current - Collector (ic) (max): 500mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 10K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 56 @ 50mA, 5V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
• Frequency - Transition: 200MHz
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: SC-59-3, SMT3, SOT-346, TO-236
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: DTB114GKT146; DTB114GKT146TR

Transistors
∗
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff curren
Collector-emitter saturation voltage
DC current transfer ratio
Input resistance
Transition frequency
Characteristics of built-in transistor
Electrical characteristics (Ta=25°C)
Electrical characteristics curves
Parameter
1000
500
200
100
50
20
10
−500µ −1m −2m
5
2
1
V
Fig.1 DC current transfer ratio
CE
=5V
COLLECTOR CURRENT : I
vs. Collector current
−5m
Ta=25°C
−10m −20m
−50m
Symbol
Ta=100°C
V
BV
BV
BV
I
I
CE(sat)
−100m −200m −500m
h
CBO
EBO
R
f
C
FE
CBO
CEO
EBO
T
(A)
Ta=
∗
−40°C
Min.
−50
−50
−5
56
−
−
−
7
−
Typ.
200
10
−
−
−
−
−
−
−
Fig.2 Collector-Emitter saturation voltage
−500m
−200m
−100m
−50m
−20m
−10m
−5m
−2m
−1m
−1
−500µ −1m −2m
−580
Max.
−0.5
−0.3
13
vs. Collector current
I
−
−
−
−
−
C
/ I
B
=20
COLLECTOR CURRENT : I
Ta=25°C
MHz
Unit
µA
µA
kΩ
−5m
V
V
V
V
−
−10m −20m
Ta=100°C
I
I
I
V
V
I
I
V
C
C
E
C
C
CB
EB
CE
= −720µA
= −50µA
= −1mA
/I
= −50mA , V
B
−50m−100m −200m −500m
= −4V
= −50V
= −10V , I
= −50mA/−2.5mA
C
Ta=
(A)
−40°C
Conditions
E
Rev.B
CE
=50mA , f=100MHz
DTB114GK
= −5V
−
2/2