PDTA115TE,115 NXP Semiconductors, PDTA115TE,115 Datasheet - Page 4

TRANS PNP W/RES 50V SOT-416

PDTA115TE,115

Manufacturer Part Number
PDTA115TE,115
Description
TRANS PNP W/RES 50V SOT-416
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PDTA115TE,115

Package / Case
SC-75, SOT-416
Transistor Type
PNP - Pre-Biased
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
100K
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 1mA, 5V
Vce Saturation (max) @ Ib, Ic
150mV @ 250µA, 5mA
Current - Collector Cutoff (max)
1µA
Power - Max
150mW
Mounting Type
Surface Mount
Configuration
Single
Transistor Polarity
PNP
Typical Input Resistor
100 KOhms
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
50 V
Peak Dc Collector Current
100 mA
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
568-2111-2
934058801115
PDTA115TE T/R
NXP Semiconductors
5. Limiting values
6. Thermal characteristics
PDTA115T_SER_5
Product data sheet
Table 6.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
[2]
[3]
Table 7.
[1]
[2]
[3]
Symbol
V
V
V
I
I
P
T
T
T
Symbol
R
O
CM
stg
j
amb
CBO
CEO
EBO
tot
th(j-a)
Refer to standard mounting conditions.
Reflow soldering is the only recommended soldering method.
Refer to SOT883 standard mounting conditions; FR4 printed-circuit board with 60 m copper strip line.
Refer to standard mounting conditions.
Reflow soldering is the only recommended soldering method.
Refer to SOT883 standard mounting conditions; FR4 printed-circuit board with 60 m copper strip line.
Limiting values
Thermal characteristics
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
output current (DC)
peak collector current
total power dissipation
storage temperature
junction temperature
ambient temperature
Parameter
thermal resistance from
junction to ambient
SOT416
SOT346
SOT883
SOT54
SOT23
SOT323
SOT416
SOT346
SOT883
SOT54
SOT23
SOT323
Rev. 05 — 2 September 2009
PNP resistor-equipped transistors; R1 = 100 k , R2 = open
Conditions
open emitter
open base
open collector
T
Conditions
in free air
amb
25 C
PDTA115T series
[2][3]
[2][3]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
Min
-
-
-
-
-
-
-
-
-
-
-
-
Min
-
-
-
-
-
-
65
65
Typ
-
-
-
-
-
-
© NXP B.V. 2009. All rights reserved.
Max
150
250
250
500
250
200
+150
150
+150
50
50
5
100
100
Max
833
500
500
250
500
625
Unit
V
V
V
mA
mA
mW
mW
mW
mW
mW
mW
C
C
C
Unit
K/W
K/W
K/W
K/W
K/W
K/W
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