PDTA114YT,215 NXP Semiconductors, PDTA114YT,215 Datasheet - Page 3

• Manufacturer Part Number: PDTA114YT,215
• Description: TRANS PNP 50V 100MA SOT23
• Manufacturer: NXP Semiconductors

Specifications of PDTA114YT,215

• Package / Case: TO-236-3, SC-59, SOT-23-3
• Transistor Type: PNP - Pre-Biased
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 10K
• Resistor - Emitter Base (r2) (ohms): 47K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 5mA, 5V
• Vce Saturation (max) @ Ib, Ic: 100mV @ 250µA, 5mA
• Current - Collector Cutoff (max): 1µA
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Configuration: Single
• Transistor Polarity: PNP
• Typical Input Resistor: 10 KOhm
• Typical Resistor Ratio: 0.213
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 50 V
• Peak Dc Collector Current: 100 mA
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934055236215; PDTA114YT T/R; PDTA114YT T/R

NXP Semiconductors
SIMPLIFIED OUTLINE, SYMBOL AND PINNING
2004 Aug 02
PDTA114YS
PDTA114YE
PDTA114YEF
PDTA114YK
PDTA114YT
PDTA114YU
PDTA114YM
TYPE NUMBER
PNP resistor-equipped transistors;
R1 = 10 kΩ, R2 = 47 kΩ
handbook, halfpage
handbook, halfpage
handbook, halfpage
2
1
Bottom view
Top view
1
1
2
3
SIMPLIFIED OUTLINE AND SYMBOL
3
2
3
MAM338
1
3
1
1
R1
R1
R2
R2
R1
MDB267
MDB271
R2
3
2
3
2
2
3
PDTA114Y series
PIN
1
2
3
1
2
3
1
2
3
Product data sheet
PINNING
base
collector
emitter
base
emitter
collector
base
emitter
collector
DESCRIPTION