PDTA124XT,215 NXP Semiconductors, PDTA124XT,215 Datasheet - Page 5

TRANS PNP 50V 100MA SOT23

PDTA124XT,215

Manufacturer Part Number
PDTA124XT,215
Description
TRANS PNP 50V 100MA SOT23
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PDTA124XT,215

Package / Case
TO-236-3, SC-59, SOT-23-3
Transistor Type
PNP - Pre-Biased
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
22K
Resistor - Emitter Base (r2) (ohms)
47K
Dc Current Gain (hfe) (min) @ Ic, Vce
80 @ 5mA, 5V
Vce Saturation (max) @ Ib, Ic
150mV @ 500µA, 10mA
Current - Collector Cutoff (max)
1µA
Power - Max
250mW
Mounting Type
Surface Mount
Configuration
Single
Transistor Polarity
PNP
Typical Input Resistor
22 KOhm
Typical Resistor Ratio
0.476
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
50 V
Peak Dc Collector Current
100 mA
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
934057530215
PDTA124XT T/R
PDTA124XT T/R
NXP Semiconductors
6. Thermal characteristics
7. Characteristics
PDTA124X_SER_8
Product data sheet
Table 7.
[1]
[2]
[3]
Table 8.
T
Symbol
R
Symbol
I
I
I
h
V
V
V
R1
R2/R1
C
CBO
CEO
EBO
amb
FE
CEsat
I(off)
I(on)
th(j-a)
c
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Reflow soldering is the only recommended soldering method.
Device mounted on an FR4 PCB with 60 m copper strip line, standard footprint.
= 25 C unless otherwise specified
Parameter
thermal resistance from
junction to ambient
Parameter
collector-base cut-off
current
collector-emitter cut-off
current
emitter-base cut-off
current
DC current gain
collector-emitter
saturation voltage
off-state input voltage
on-state input voltage
bias resistor 1 (input)
bias resistor ratio
collector capacitance
Thermal characteristics
Characteristics
SOT416
SOT490
SOT346
SOT883
SOT54
SOT23
SOT323
Rev. 08 — 3 September 2009
PNP resistor-equipped transistors; R1 = 22 k , R2 = 47 k
Conditions
V
V
V
T
V
V
I
I
V
V
V
f = 1 MHz
C
B
Conditions
in free air
j
CB
CE
CE
EB
CE
CE
CE
CB
= 150 C
= 0.5 mA
= 10 mA;
= 50 V; I
= 30 V; I
= 30 V; I
= 5 V; I
= 5 V; I
= 5 V; I
= 0.3 V; I
= 10 V; I
C
C
C
E
E
B
B
= 0 A
= 5 mA
= 100 A
C
= i
= 0 A
= 0 A
= 0 A;
= 2 mA
e
PDTA124X series
= 0 A;
[1][2]
[2][3]
[1]
[1]
[1]
[1]
[1]
Min
-
-
-
-
-
-
-
Min
-
-
-
-
80
-
-
15.4
1.7
-
2
Typ
-
-
-
-
-
-
-
Typ
-
-
-
-
-
-
22
2.1
-
0.8
1.1
© NXP B.V. 2009. All rights reserved.
Max
833
500
500
500
250
500
625
Max
-
-
28.6
2.6
3
100
1
50
120
150
0.5
Unit
K/W
K/W
K/W
K/W
K/W
K/W
K/W
Unit
nA
mV
V
V
k
pF
5 of 12
A
A
A

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